All MOSFET. IRF9Z24S Datasheet

 

IRF9Z24S Datasheet and Replacement


   Type Designator: IRF9Z24S
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 11 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 68 nS
   Cossⓘ - Output Capacitance: 360 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
   Package: TO263
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IRF9Z24S Datasheet (PDF)

 ..1. Size:311K  international rectifier
 irf9z24s.pdf pdf_icon

IRF9Z24S

PD - 9.912AIRF9Z24S/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF9Z24S)VDSS = -60V Low-profile through-hole (IRF9Z24L) 175C Operating TemperatureRDS(on) = 0.28 Fast SwitchingG P- ChannelID = -11A Fully Avalanche RatedSDescriptionThird Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve

 ..2. Size:167K  vishay
 irf9z24s sihf9z24s irf9z24l sihf9z24l.pdf pdf_icon

IRF9Z24S

IRF9Z24S, SiHF9Z24S, IRF9Z24L, SiHF9Z24LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 60 Advanced Process TechnologyRDS(on) ()VGS = - 10 V 0.28 Surface Mount (IRF9Z24S, SiHF9Z24S)Qg (Max.) (nC) 19 Low-Profile Through-Hole (IRF9Z24L, SiHF9Z24L) 175 C Operating TemperatureQgs (nC) 5.4

 ..3. Size:193K  vishay
 irf9z24spbf sihf9z24l sihf9z24s.pdf pdf_icon

IRF9Z24S

IRF9Z24S, SiHF9Z24S, IRF9Z24L, SiHF9Z24LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 60 Advanced Process TechnologyRDS(on) ()VGS = - 10 V 0.28 Surface Mount (IRF9Z24S, SiHF9Z24S)Qg (Max.) (nC) 19 Low-Profile Through-Hole (IRF9Z24L, SiHF9Z24L) 175 C Operating TemperatureQgs (nC) 5.4

 7.1. Size:168K  international rectifier
 irf9z24ns.pdf pdf_icon

IRF9Z24S

PD - 91742AIRF9Z24NS/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF9Z24NS)VDSS = -55V Low-profile through-hole (IRF9Z24NL) 175C Operating TemperatureRDS(on) = 0.175 P-ChannelG Fast SwitchingID = -12A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achi

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Datasheet: IRF9Z14S , IRF9Z15 , IRF9Z20 , IRF9Z22 , IRF9Z24 , IRF9Z24N , IRF9Z24NL , IRF9Z24NS , IRFP250 , IRF9Z25 , IRF9Z30 , IRF9Z32 , IRF9Z34 , IRF9Z34N , IRF9Z34NL , IRF9Z34NS , IRF9Z34S .

History: SVS20N60SD2 | SVF7N60F | RSD080N06FRA | GSM4936S | MVGSF1N03L | SM9989DSO | ATM2N65TE

Keywords - IRF9Z24S MOSFET datasheet

 IRF9Z24S cross reference
 IRF9Z24S equivalent finder
 IRF9Z24S lookup
 IRF9Z24S substitution
 IRF9Z24S replacement

 

 
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