IRF9Z24S Datasheet. Specs and Replacement

Type Designator: IRF9Z24S  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 60 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 68 nS

Cossⓘ - Output Capacitance: 360 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm

Package: TO263

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IRF9Z24S substitution

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IRF9Z24S datasheet

 ..1. Size:311K  international rectifier
irf9z24s.pdf pdf_icon

IRF9Z24S

PD - 9.912A IRF9Z24S/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF9Z24S) VDSS = -60V Low-profile through-hole (IRF9Z24L) 175 C Operating Temperature RDS(on) = 0.28 Fast Switching G P- Channel ID = -11A Fully Avalanche Rated S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve... See More ⇒

 ..2. Size:167K  vishay
irf9z24s sihf9z24s irf9z24l sihf9z24l.pdf pdf_icon

IRF9Z24S

IRF9Z24S, SiHF9Z24S, IRF9Z24L, SiHF9Z24L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 60 Advanced Process Technology RDS(on) ( )VGS = - 10 V 0.28 Surface Mount (IRF9Z24S, SiHF9Z24S) Qg (Max.) (nC) 19 Low-Profile Through-Hole (IRF9Z24L, SiHF9Z24L) 175 C Operating Temperature Qgs (nC) 5.4 ... See More ⇒

 ..3. Size:193K  vishay
irf9z24spbf sihf9z24l sihf9z24s.pdf pdf_icon

IRF9Z24S

IRF9Z24S, SiHF9Z24S, IRF9Z24L, SiHF9Z24L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 60 Advanced Process Technology RDS(on) ( )VGS = - 10 V 0.28 Surface Mount (IRF9Z24S, SiHF9Z24S) Qg (Max.) (nC) 19 Low-Profile Through-Hole (IRF9Z24L, SiHF9Z24L) 175 C Operating Temperature Qgs (nC) 5.4 ... See More ⇒

 7.1. Size:168K  international rectifier
irf9z24ns.pdf pdf_icon

IRF9Z24S

PD - 91742A IRF9Z24NS/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF9Z24NS) VDSS = -55V Low-profile through-hole (IRF9Z24NL) 175 C Operating Temperature RDS(on) = 0.175 P-Channel G Fast Switching ID = -12A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achi... See More ⇒

Detailed specifications: IRF9Z14S, IRF9Z15, IRF9Z20, IRF9Z22, IRF9Z24, IRF9Z24N, IRF9Z24NL, IRF9Z24NS, IRFB3607, IRF9Z25, IRF9Z30, IRF9Z32, IRF9Z34, IRF9Z34N, IRF9Z34NL, IRF9Z34NS, IRF9Z34S

Keywords - IRF9Z24S MOSFET specs

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