All MOSFET. IRF9Z34N Datasheet

 

IRF9Z34N Datasheet and Replacement


   Type Designator: IRF9Z34N
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 68 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 19 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 35(max) nC
   tr ⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 280 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: TO220AB
 

 IRF9Z34N substitution

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IRF9Z34N Datasheet (PDF)

 ..1. Size:108K  international rectifier
irf9z34n.pdf pdf_icon

IRF9Z34N

PD - 9.1485BIRF9Z34NHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = -55V 175C Operating Temperature Fast SwitchingRDS(on) = 0.10 P-ChannelG Fully Avalanche RatedID = -19ADescription SFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon are

 ..2. Size:240K  international rectifier
irf9z34npbf.pdf pdf_icon

IRF9Z34N

IRF9Z34NPbF l Advanced Process Technologyl Dynamic dv/dt RatingDl 175C Operating Temperature l Fast Switchingl P-Channel l Fully Avalanche Rated Gl Lead-Free Description S

 ..3. Size:242K  inchange semiconductor
irf9z34n.pdf pdf_icon

IRF9Z34N

isc P-Channel MOSFET Transistor IRF9Z34N,IIRF9Z34NFEATURESStatic drain-source on-resistance:RDS(on)0.1Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONCombine with the fast switching speed and ruggedized devicedesign,provide the designer with an extremely efficient andrelia

 0.1. Size:241K  international rectifier
auirf9z34n.pdf pdf_icon

IRF9Z34N

PD - 97627AAUTOMOTIVE GRADEAUIRF9Z34NFeaturesHEXFET Power MOSFETl Advanced Planar Technologyl P-Channel MOSFETDV(BR)DSS-55Vl Dynamic dV/dT Ratingl 175C Operating TemperatureRDS(on) max.0.10l Fast Switching Gl Fully Avalanche RatedIDS -19Al Repetitive Avalanche Allowed up to Tjmaxl Lead-Free, RoHS Compliantl Automotive Qualified*DDescriptionS

Datasheet: IRF9Z24N , IRF9Z24NL , IRF9Z24NS , IRF9Z24S , IRF9Z25 , IRF9Z30 , IRF9Z32 , IRF9Z34 , STP80NF70 , IRF9Z34NL , IRF9Z34NS , IRF9Z34S , IRF9Z35 , IRFB11N50A , IRFB9N30A , IRFB9N60A , IRFB9N65A .

History: FDB603AL

Keywords - IRF9Z34N MOSFET datasheet

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