IRF9Z34N
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRF9Z34N
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 68
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 19
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 35(max)
nC
trⓘ - Rise Time: 55
nS
Cossⓘ -
Output Capacitance: 280
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1
Ohm
Package:
TO220AB
IRF9Z34N
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRF9Z34N
Datasheet (PDF)
..1. Size:108K international rectifier
irf9z34n.pdf
PD - 9.1485BIRF9Z34NHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = -55V 175C Operating Temperature Fast SwitchingRDS(on) = 0.10 P-ChannelG Fully Avalanche RatedID = -19ADescription SFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon are
..2. Size:240K international rectifier
irf9z34npbf.pdf
IRF9Z34NPbF l Advanced Process Technologyl Dynamic dv/dt RatingDl 175C Operating Temperature l Fast Switchingl P-Channel l Fully Avalanche Rated Gl Lead-Free Description S
..3. Size:240K infineon
irf9z34npbf.pdf
IRF9Z34NPbF l Advanced Process Technologyl Dynamic dv/dt RatingDl 175C Operating Temperature l Fast Switchingl P-Channel l Fully Avalanche Rated Gl Lead-Free Description S
..4. Size:242K inchange semiconductor
irf9z34n.pdf
isc P-Channel MOSFET Transistor IRF9Z34N,IIRF9Z34NFEATURESStatic drain-source on-resistance:RDS(on)0.1Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONCombine with the fast switching speed and ruggedized devicedesign,provide the designer with an extremely efficient andrelia
0.1. Size:241K international rectifier
auirf9z34n.pdf
PD - 97627AAUTOMOTIVE GRADEAUIRF9Z34NFeaturesHEXFET Power MOSFETl Advanced Planar Technologyl P-Channel MOSFETDV(BR)DSS-55Vl Dynamic dV/dT Ratingl 175C Operating TemperatureRDS(on) max.0.10l Fast Switching Gl Fully Avalanche RatedIDS -19Al Repetitive Avalanche Allowed up to Tjmaxl Lead-Free, RoHS Compliantl Automotive Qualified*DDescriptionS
0.2. Size:162K international rectifier
irf9z34ns.pdf
PD - 9.1525IRF9Z34NS/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF9Z34NS)VDSS = -55V Low-profile through-hole (IRF9Z34NL) 175C Operating TemperatureRDS(on) = 0.10 Fast SwitchingG P-ChannelID = -19A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achie
0.3. Size:1102K international rectifier
irf9z34nlpbf irf9z34nspbf.pdf
PD- 95769IRF9Z34NSPbFIRF9Z34NLPbF Lead-Freewww.irf.com 104/25/05IRF9Z34NS/LPbF2 www.irf.comIRF9Z34NS/LPbFwww.irf.com 3IRF9Z34NS/LPbF4 www.irf.comIRF9Z34NS/LPbFwww.irf.com 5IRF9Z34NS/LPbF6 www.irf.comIRF9Z34NS/LPbFwww.irf.com 7IRF9Z34NS/LPbFD2Pak Package Outline (Dimensions are shown in millimeters (inches)D2Pak Part Marking InformationTHIS IS
0.4. Size:1102K infineon
irf9z34nspbf irf9z34nlpbf.pdf
PD- 95769IRF9Z34NSPbFIRF9Z34NLPbF Lead-Freewww.irf.com 104/25/05IRF9Z34NS/LPbF2 www.irf.comIRF9Z34NS/LPbFwww.irf.com 3IRF9Z34NS/LPbF4 www.irf.comIRF9Z34NS/LPbFwww.irf.com 5IRF9Z34NS/LPbF6 www.irf.comIRF9Z34NS/LPbFwww.irf.com 7IRF9Z34NS/LPbFD2Pak Package Outline (Dimensions are shown in millimeters (inches)D2Pak Part Marking InformationTHIS IS
0.5. Size:814K cn vbsemi
irf9z34ns.pdf
IRF9Z34NSwww.VBsemi.twP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () Max. ID (A) Qg (Typ.)Definition TrenchFET Power MOSFET0.048at VGS = - 10 V- 35- 60 60 100 % Rg and UIS Tested0.060at VGS = - 4.5 V - 30 Compliant to RoHS Directive 2002/95/ECAPPLICATIONSS Power Switch Load
Datasheet: IRF9Z24N
, IRF9Z24NL
, IRF9Z24NS
, IRF9Z24S
, IRF9Z25
, IRF9Z30
, IRF9Z32
, IRF9Z34
, 4N60
, IRF9Z34NL
, IRF9Z34NS
, IRF9Z34S
, IRF9Z35
, IRFB11N50A
, IRFB9N30A
, IRFB9N60A
, IRFB9N65A
.