IRF9Z34N PDF and Equivalents Search

 

IRF9Z34N Specs and Replacement

Type Designator: IRF9Z34N

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 68 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 19 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 55 nS

Cossⓘ - Output Capacitance: 280 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: TO220AB

IRF9Z34N substitution

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IRF9Z34N datasheet

 ..1. Size:108K  international rectifier
 irf9z34n.pdf pdf_icon

IRF9Z34N

PD - 9.1485B IRF9Z34N HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = -55V 175 C Operating Temperature Fast Switching RDS(on) = 0.10 P-Channel G Fully Avalanche Rated ID = -19A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon are... See More ⇒

 ..2. Size:240K  international rectifier
 irf9z34npbf.pdf pdf_icon

IRF9Z34N

IRF9Z34NPbF l Advanced Process Technology l Dynamic dv/dt Rating D l 175 C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated G l Lead-Free Description S ... See More ⇒

 ..3. Size:242K  inchange semiconductor
 irf9z34n.pdf pdf_icon

IRF9Z34N

isc P-Channel MOSFET Transistor IRF9Z34N,IIRF9Z34N FEATURES Static drain-source on-resistance RDS(on) 0.1 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Combine with the fast switching speed and ruggedized device design,provide the designer with an extremely efficient and relia... See More ⇒

 0.1. Size:241K  international rectifier
 auirf9z34n.pdf pdf_icon

IRF9Z34N

PD - 97627A AUTOMOTIVE GRADE AUIRF9Z34N Features HEXFET Power MOSFET l Advanced Planar Technology l P-Channel MOSFET D V(BR)DSS -55V l Dynamic dV/dT Rating l 175 C Operating Temperature RDS(on) max. 0.10 l Fast Switching G l Fully Avalanche Rated ID S -19A l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified* D Description S ... See More ⇒

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Detailed specifications: IRF9Z24N , IRF9Z24NL , IRF9Z24NS , IRF9Z24S , IRF9Z25 , IRF9Z30 , IRF9Z32 , IRF9Z34 , NCEP15T14 , IRF9Z34NL , IRF9Z34NS , IRF9Z34S , IRF9Z35 , IRFB11N50A , IRFB9N30A , IRFB9N60A , IRFB9N65A .

History: FHP80N07A

Keywords - IRF9Z34N MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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