2SK1082-01 Datasheet and Replacement
Type Designator: 2SK1082-01
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 110 nS
Cossⓘ - Output Capacitance: 140 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.8 Ohm
Package: TO3P
2SK1082-01 substitution
2SK1082-01 Datasheet (PDF)
2sk1082.pdf
isc N-Channel MOSFET Transistor 2SK1082DESCRIPTIONDrain Current I =6A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 9
Datasheet: 2SK3647-01 , 2SK3648-01 , 2SK3649-01MR , 2SK3650-01L , 2SK3650-01S , 2SK3650-01SJ , 2SK3651-01R , 2SK1081-01 , IRFB4227 , 2SK1102-01MR , 2SK3882-01 , 2SK3883-01 , 2SK3884-01 , 2SK3885-01 , 2SK3886-01MR , 2SK3887-01 , 2SK3888-01MR .
History: STP6N120K3 | 3SK103
Keywords - 2SK1082-01 MOSFET datasheet
2SK1082-01 cross reference
2SK1082-01 equivalent finder
2SK1082-01 lookup
2SK1082-01 substitution
2SK1082-01 replacement
History: STP6N120K3 | 3SK103
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