2SK1082-01 PDF and Equivalents Search

 

2SK1082-01 Specs and Replacement

Type Designator: 2SK1082-01

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 110 nS

Cossⓘ - Output Capacitance: 140 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.8 Ohm

Package: TO3P

2SK1082-01 substitution

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2SK1082-01 datasheet

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2SK1082-01

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2SK1082-01

isc N-Channel MOSFET Transistor 2SK1082 DESCRIPTION Drain Current I =6A@ T =25 D C Drain Source Voltage- V =900V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 9... See More ⇒

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Detailed specifications: 2SK3647-01 , 2SK3648-01 , 2SK3649-01MR , 2SK3650-01L , 2SK3650-01S , 2SK3650-01SJ , 2SK3651-01R , 2SK1081-01 , AO3400 , 2SK1102-01MR , 2SK3882-01 , 2SK3883-01 , 2SK3884-01 , 2SK3885-01 , 2SK3886-01MR , 2SK3887-01 , 2SK3888-01MR .

Keywords - 2SK1082-01 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 


 
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