2SK1079 MOSFET Datasheet: N-Ch, 100V, 0.6A. Full specification with pinout and replacement list

2SK1079 Specs and Replacement

Type Designator: 2SK1079

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 40 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm

Package: SOT89

2SK1079 substitution

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2SK1079 datasheet

..1. Size:69K toshiba
2sk1079.pdf pdf_icon

8.1. Size:371K toshiba
2sk1078.pdf pdf_icon

www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com ... See More ⇒

8.2. Size:84K renesas
2sk1070.pdf pdf_icon

Preliminary Datasheet R07DS0282EJ0300 2SK1070 (Previous REJ03G0574-0200) Rev.3.00 Silicon N-Channel Junction FET Mar 28, 2011 Application Low frequency / High frequency amplifier Outline RENESAS Package code PLSP0003ZB-A (Package name MPAK) 3 1 1. Drain 2. Source 2 3. Gate Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Gate to drain voltage ... See More ⇒

8.3. Size:62K inchange semiconductor
2sk1074.pdf pdf_icon

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1074 DESCRIPTION Drain Current ID=3A@ TC=25 Drain Source Voltage- VDSS=800V(Min) APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VALUE UNIT ARAMETER V Drain-Source Voltage (V =0) 800 V DSS GS V Gate-Source Volta... See More ⇒