All MOSFET. 2N7219 Datasheet

 

2N7219 Datasheet and Replacement


   Type Designator: 2N7219
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 105(max) nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: TO254
 

 2N7219 substitution

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2N7219 Datasheet (PDF)

 ..1. Size:64K  omnirel
 2n7218 2n7219 2n7221 2n7222.pdf pdf_icon

2N7219

2N7218, JANTX2N7218, JANTXV2N7218 2N7221, JANTX2N7221, JANTXV2N7221 2N7219, JANTX2N7219, JANTXV2N7219 2N7222, JANTX2N7222, JANTXV2N7222 JANTX, JANTXV POWER MOSFET IN TO-254AA PACKAGE,QUALIFIED TO MIL-PRF-19500/596100V Thru 500V, Up to 28A, N-Channel, MOSFET Power Transistor, Repetitive Avalanche RatedFEATURESRepetitive Avalanche RatingIsolated and Hermetically SealedL

 0.1. Size:165K  international rectifier
 2n7219u.pdf pdf_icon

2N7219

PD - 91548CIRFN240JANTX2N7219UJANTXV2N7219UPOWER MOSFETREF:MIL-PRF-19500/596SURFACE MOUNT(SMD-1) 200V, N-CHANNELProduct SummaryHEXFET MOSFET TECHNOLOGYPart Number RDS(on) IDIRFN240 0.18 18AHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. Theefficient geometry design achieves very low on-state re-

 9.1. Size:21K  semelab
 2n7218u.pdf pdf_icon

2N7219

IRFN140SEME2N7218ULABMECHANICAL DATADimensions in mm (inches)NCHANNELPOWER MOSFET VDSS 100V ID(cont) 28A RDS(on) 0.077FEATURES HERMETICALLY SEALED SURFACEMOUNT PACKAGE SMALL FOOTPRINT EFFICIENT USE OFPCB SPACE. SIMPLE DRIVE RE

Datasheet: 2N7120 , 2N7121 , 2N7122 , 2N7123 , 2N7124 , 2N7125 , 2N7126 , 2N7218 , 7N60 , 2N7220 , 2N7221 , 2N7224 , 2N7225 , 2N7227 , 2N7227JV , 2N7227JX , 2N7228 .

History: 10N60K

Keywords - 2N7219 MOSFET datasheet

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