2N7219 MOSFET. Datasheet pdf. Equivalent
Type Designator: 2N7219
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 18 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 60(max) nC
trⓘ - Rise Time: 105(max) nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
Package: TO254
2N7219 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2N7219 Datasheet (PDF)
2n7218 2n7219 2n7221 2n7222.pdf
2N7218, JANTX2N7218, JANTXV2N7218 2N7221, JANTX2N7221, JANTXV2N7221 2N7219, JANTX2N7219, JANTXV2N7219 2N7222, JANTX2N7222, JANTXV2N7222 JANTX, JANTXV POWER MOSFET IN TO-254AA PACKAGE,QUALIFIED TO MIL-PRF-19500/596100V Thru 500V, Up to 28A, N-Channel, MOSFET Power Transistor, Repetitive Avalanche RatedFEATURESRepetitive Avalanche RatingIsolated and Hermetically SealedL
2n7219u.pdf
PD - 91548CIRFN240JANTX2N7219UJANTXV2N7219UPOWER MOSFETREF:MIL-PRF-19500/596SURFACE MOUNT(SMD-1) 200V, N-CHANNELProduct SummaryHEXFET MOSFET TECHNOLOGYPart Number RDS(on) IDIRFN240 0.18 18AHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. Theefficient geometry design achieves very low on-state re-
2n7218u.pdf
IRFN140SEME2N7218ULABMECHANICAL DATADimensions in mm (inches)NCHANNELPOWER MOSFET VDSS 100V ID(cont) 28A RDS(on) 0.077FEATURES HERMETICALLY SEALED SURFACEMOUNT PACKAGE SMALL FOOTPRINT EFFICIENT USE OFPCB SPACE. SIMPLE DRIVE RE
Datasheet: 2N7120 , 2N7121 , 2N7122 , 2N7123 , 2N7124 , 2N7125 , 2N7126 , 2N7218 , IRFB31N20D , 2N7220 , 2N7221 , 2N7224 , 2N7225 , 2N7227 , 2N7227JV , 2N7227JX , 2N7228 .
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