2N7219 MOSFET. Datasheet pdf. Equivalent
Type Designator: 2N7219
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 125 W
Maximum Drain-Source Voltage |Vds|: 200 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 18 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 60(max) nC
Rise Time (tr): 105(max) nS
Maximum Drain-Source On-State Resistance (Rds): 0.18 Ohm
Package: TO254
2N7219 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2N7219 Datasheet (PDF)
0.1. 2n7219u.pdf 
Size:165K _international_rectifier
PD - 91548CIRFN240JANTX2N7219UJANTXV2N7219UPOWER MOSFETREF:MIL-PRF-19500/596SURFACE MOUNT(SMD-1) 200V, N-CHANNELProduct SummaryHEXFET MOSFET TECHNOLOGYPart Number RDS(on) IDIRFN240 0.18 18AHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. Theefficient geometry design achieves very low on-state re-
0.2. 2n7218 2n7219 2n7221 2n7222.pdf Size:64K _omnirel
2N7218, JANTX2N7218, JANTXV2N7218 2N7221, JANTX2N7221, JANTXV2N7221 2N7219, JANTX2N7219, JANTXV2N7219 2N7222, JANTX2N7222, JANTXV2N7222 JANTX, JANTXV POWER MOSFET IN TO-254AA PACKAGE,QUALIFIED TO MIL-PRF-19500/596100V Thru 500V, Up to 28A, N-Channel, MOSFET Power Transistor, Repetitive Avalanche RatedFEATURESRepetitive Avalanche RatingIsolated and Hermetically SealedL
9.1. 2n7218u.pdf Size:21K _semelab
IRFN140SEME2N7218ULABMECHANICAL DATADimensions in mm (inches)NCHANNELPOWER MOSFET VDSS 100V ID(cont) 28A RDS(on) 0.077FEATURES HERMETICALLY SEALED SURFACEMOUNT PACKAGE SMALL FOOTPRINT EFFICIENT USE OFPCB SPACE. SIMPLE DRIVE RE
Datasheet: 2N7120 , 2N7121 , 2N7122 , 2N7123 , 2N7124 , 2N7125 , 2N7126 , 2N7218 , IRFP260N , 2N7220 , 2N7221 , 2N7224 , 2N7225 , 2N7227 , 2N7227JV , 2N7227JX , 2N7228 .
