All MOSFET. 2N7219 Datasheet

 

2N7219 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2N7219

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 125 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Drain Current |Id|: 18 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 60 nC

Drain-Source Capacitance (Cd): 1300 pF

Maximum Drain-Source On-State Resistance (Rds): 0.18 Ohm

Package: TO254

2N7219 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2N7219 Datasheet (PDF)

0.1. 2n7219u.pdf Size:165K _international_rectifier

2N7219
2N7219

PD - 91548C IRFN240 JANTX2N7219U JANTXV2N7219U POWER MOSFET REF:MIL-PRF-19500/596 SURFACE MOUNT(SMD-1) 200V, N-CHANNEL ® Product Summary HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFN240 0.18 Ω 18A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state re-

0.2. 2n7218 2n7219 2n7221 2n7222.pdf Size:64K _omnirel

2N7219
2N7219

2N7218, JANTX2N7218, JANTXV2N7218 2N7221, JANTX2N7221, JANTXV2N7221 2N7219, JANTX2N7219, JANTXV2N7219 2N7222, JANTX2N7222, JANTXV2N7222 JANTX, JANTXV POWER MOSFET IN TO-254AA PACKAGE, QUALIFIED TO MIL-PRF-19500/596 100V Thru 500V, Up to 28A, N-Channel, MOSFET Power Transistor, Repetitive Avalanche Rated FEATURES •Repetitive Avalanche Rating •Isolated and Hermetically Sealed •L

 9.1. 2n7218u.pdf Size:21K _semelab

2N7219
2N7219

IRFN140 SEME 2N7218U LAB MECHANICAL DATA Dimensions in mm (inches) N–CHANNEL POWER MOSFET VDSS 100V ID(cont) 28A Ω RDS(on) 0.077Ω FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE • SMALL FOOTPRINT – EFFICIENT USE OF PCB SPACE. • SIMPLE DRIVE RE

Datasheet: 2N7120 , 2N7121 , 2N7122 , 2N7123 , 2N7124 , 2N7125 , 2N7126 , 2N7218 , IRFP260N , 2N7220 , 2N7221 , 2N7224 , 2N7225 , 2N7227 , 2N7227JV , 2N7227JX , 2N7228 .

 

 
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