2SK1200 Datasheet and Replacement
Type Designator: 2SK1200
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 80 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 70 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 7 Ohm
Package: TO3PI
2SK1200 substitution
2SK1200 Datasheet (PDF)
2sk1200.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1200 DESCRIPTION Drain Current ID= 3A@ TC=25 Drain Source Voltage- : VDSS= 900V(Min) Fast Switching Speed APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 900 V
Datasheet: 2SK1079 , 2SK1089 , 2SK1105-R , 2SK1171 , 2SK1171-01 , 2SK1172 , 2SK1172-01 , 2SK1199 , IRF3205 , 2SK693 , 2SK694 , 2SK695 , 2SK696 , 2SK715U-AC , 2SK715V-AC , 2SK719 , 2SK723 .
Keywords - 2SK1200 MOSFET datasheet
2SK1200 cross reference
2SK1200 equivalent finder
2SK1200 lookup
2SK1200 substitution
2SK1200 replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and datasheets
LIST
Last Update
MOSFET: AGM25N15C | AGM2319EL | AGM2309EL | AGM218MAP | AGM216MNE | AGM216ME | AGM215TS | AGM215MNE | AGM210S | AGM210MAP | AGM210AP | AGM20T09LL | AGM20T09C | AGM20P30AP1 | AGM20P30AP | AGM312D
Popular searches
2sc897 datasheet | 2sd389 | mp41 transistor | nkt275 datasheet | 2sd947 | a763 transistor | fhp40n20 | 2n3035 transistor

