2SK726 Datasheet and Replacement
Type Designator: 2SK726
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
Package: TO3PN
2SK726 substitution
2SK726 Datasheet (PDF)
2sk726.pdf

isc N-Channel MOSFET Transistor 2SK726DESCRIPTIONDrain Current I =3A@ T =25D CDrain Source Voltage-: V =900V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies , UPS,AC and DCmotor c
Datasheet: 2SK693 , 2SK694 , 2SK695 , 2SK696 , 2SK715U-AC , 2SK715V-AC , 2SK719 , 2SK723 , IRFP460 , 2SK685 , 2SK1280 , 2SK1321 , 2SK1322 , 2SK1323 , 2SK1329 , 2SK1330 , 2SK1330A .
History: IXTA96P085T | SI4686DY | AP3A010MT | SUP40N10-30 | HGB014N08A | BLP10N20J-B | PSMNR60-25YLH
Keywords - 2SK726 MOSFET datasheet
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History: IXTA96P085T | SI4686DY | AP3A010MT | SUP40N10-30 | HGB014N08A | BLP10N20J-B | PSMNR60-25YLH



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