2SK726 Specs and Replacement
Type Designator: 2SK726
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
Package: TO3PN
2SK726 substitution
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2SK726 datasheet
2sk726.pdf
isc N-Channel MOSFET Transistor 2SK726 DESCRIPTION Drain Current I =3A@ T =25 D C Drain Source Voltage- V =900V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor c... See More ⇒
Detailed specifications: 2SK693, 2SK694, 2SK695, 2SK696, 2SK715U-AC, 2SK715V-AC, 2SK719, 2SK723, IRF640, 2SK685, 2SK1280, 2SK1321, 2SK1322, 2SK1323, 2SK1329, 2SK1330, 2SK1330A
Keywords - 2SK726 MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: CEB6030L | S10H12RP
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