2SK1686 Datasheet and Replacement
Type Designator: 2SK1686
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 70 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
ton ⓘ - Turn-on Time: 115 nS
Cossⓘ - Output Capacitance: 420 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO3PF
2SK1686 substitution
2SK1686 Datasheet (PDF)
2sk168.pdf
2SK168Silicon N-Channel Junction FETApplicationVHF Amplifier, Mixer, Local oscillatorOutlineTO-92 (2)1. Gate2. Source3. Drain3212SK168Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitGate to drain voltage VGDO 30 VGate to source voltage VGSS 1 VGate current IG 10 mADrain current ID 20 mAChannel power dissipation Pch 200 mWChannel temper
Datasheet: 2SK1206 , 2SK1213 , 2SK1215F , 2SK1217 , 2SK1222 , 2SK1224 , 2SK1684 , 2SK1685 , P60NF06 , 2SK1694 , 2SK1695 , 2SK1696 , 2SK387 , 2SK388 , 2SK513 , 2SK520 , 2SK277 .
History: VBA4216 | CSFR3N60F | NCE85H25 | TPCA8027-H | SI1433DH | SSF2610E | HM120N04I
Keywords - 2SK1686 MOSFET datasheet
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History: VBA4216 | CSFR3N60F | NCE85H25 | TPCA8027-H | SI1433DH | SSF2610E | HM120N04I
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