2SJ0536 Datasheet. Specs and Replacement
Type Designator: 2SJ0536 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 50 Ohm
Package: SOT323
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2SJ0536 substitution
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2SJ0536 datasheet
2sj0536.pdf
This product complies with the RoHS Directive (EU 2002/95/EC). Silicon MOSFETs (Small Signal) 2SJ0536 Silicon P-channel MOSFET Unit mm Secondary battery packs (Li ion battery, etc.) 0.15+0.10 0.3+0.1 0.05 0.0 For switching circuits 3 Features High-speed switching 1 2 S-mini type package, allowing downsizing of the sets and auto- (0.65) (0.65) matic insertion ... See More ⇒
2sj0582.pdf
Power MOSFETs 2SJ0582 Silicon P-channel power MOSFET Unit mm 6.5 0.1 Features 2.3 0.1 5.3 0.1 4.35 0.1 Avalanche energy capability guaranteed 0.5 0.1 High-speed switching No secondary breakdown Applications 1.0 0.1 Non-contact relay 0.1 0.05 0.5 0.1 Solenoid drive 0.75 0.1 2.3 0.1 (5.3) Motor drive 4.6 0.1 (4.35) (3.0) Control e... See More ⇒
Detailed specifications: 2SK1949L, 2SK1949S, 2SK1952, 2SK1975, 2SK2957L, 2SK2957S, 2SK2958L, 2SK2958S, 7N60, 2SJ125, 2SJ128-Z, 2SJ132-Z, 2SJ133-Z, 2SJ145, 2SJ147, 2SJ172, 2SJ173
Keywords - 2SJ0536 MOSFET specs
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