2SJ0536 Datasheet and Replacement
Type Designator: 2SJ0536
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 0.15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 0.1 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 50 Ohm
Package: SOT323
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2SJ0536 Datasheet (PDF)
2sj0536.pdf

This product complies with the RoHS Directive (EU 2002/95/EC).Silicon MOSFETs (Small Signal)2SJ0536Silicon P-channel MOSFETUnit: mmSecondary battery packs (Li ion battery, etc.)0.15+0.100.3+0.10.050.0For switching circuits3 Features High-speed switching1 2 S-mini type package, allowing downsizing of the sets and auto-(0.65) (0.65)matic insertion
2sj0582.pdf

Power MOSFETs2SJ0582Silicon P-channel power MOSFETUnit: mm6.50.1 Features2.30.15.30.14.350.1 Avalanche energy capability guaranteed0.50.1 High-speed switching No secondary breakdown Applications1.00.1 Non-contact relay0.10.050.50.1 Solenoid drive 0.750.12.30.1(5.3) Motor drive4.60.1(4.35)(3.0) Control e
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: IRFR2405 | MMBF5457 | 2N3797 | SL3139K | IPD90N06S4-05 | ME45N03T | NP80N03DDE
Keywords - 2SJ0536 MOSFET datasheet
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History: IRFR2405 | MMBF5457 | 2N3797 | SL3139K | IPD90N06S4-05 | ME45N03T | NP80N03DDE



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