All MOSFET. 2SJ661-DL-1E Datasheet

 

2SJ661-DL-1E MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SJ661-DL-1E

Marking Code: J661

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 65 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 38 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 80 nC

Rise Time (tr): 285 nS

Drain-Source Capacitance (Cd): 470 pF

Maximum Drain-Source On-State Resistance (Rds): 0.039 Ohm

Package: TO263

2SJ661-DL-1E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SJ661-DL-1E Datasheet (PDF)

3.1. 2sj661-1e.pdf Size:283K _upd

2SJ661-DL-1E 2SJ661-DL-1E

Ordering number : EN8586A 2SJ661 P-Channel Power MOSFET http://onsemi.com – – Ω 60V, 38A, 39m , TO-262-3L/TO-263-2L Features • ON-resistance RDS(on)1=29.5m (typ.) • Input capacitance Ciss=4360pF (typ.) Ω • 4V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --60 V Gate-to-Source Voltage

4.1. 2sj661.pdf Size:38K _sanyo

2SJ661-DL-1E 2SJ661-DL-1E

Ordering number : EN8586 2SJ661 P-Channel Silicon MOSFET General-Purpose Switching Device 2SJ661 Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --60 V Gate-to-

 5.1. 2sj669.pdf Size:209K _toshiba

2SJ661-DL-1E 2SJ661-DL-1E

2SJ669 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS III) 2SJ669 Relay Drive, DC/DC Converter and Motor Drive Unit: mm Applications 4-V gate drive Low drain-source ON-resistance: RDS (ON) = 0.12 ? (typ.) High forward transfer admittance: |Yfs| = 5.0 S (typ.) Low leakage current: IDSS = -100 ?A (max) (VDS = -60 V) Enhancement mode: Vth = -0.8 to

5.2. 2sj668.pdf Size:204K _toshiba

2SJ661-DL-1E 2SJ661-DL-1E

2SJ668 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOSIII) 2SJ668 Relay Drive, DC/DC Converter and Motor Drive Unit: mm Applications 4 V gate drive Low drain-source ON-resistance: RDS (ON) = 0.12 ? (typ.) High forward transfer admittance: |Yfs| = 5.0 S (typ.) Low leakage current: IDSS = -100 ?A (max) (VDS = -60 V) Enhancement mode: Vth = -0.8 to -

 5.3. 2sj665.pdf Size:38K _sanyo

2SJ661-DL-1E 2SJ661-DL-1E

Ordering number : EN8590 2SJ665 P-Channel Silicon MOSFET General-Purpose Switching Device 2SJ665 Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --100 V Gate-to

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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