2SJ661-DL-1E Datasheet. Specs and Replacement

Type Designator: 2SJ661-DL-1E  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 65 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 38 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 285 nS

Cossⓘ - Output Capacitance: 470 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.039 Ohm

Package: TO263

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2SJ661-DL-1E datasheet

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2SJ661-DL-1E

Ordering number EN8586A 2SJ661 P-Channel Power MOSFET http //onsemi.com 60V, 38A, 39m , TO-262-3L/TO-263-2L Features ON-resistance RDS(on)1=29.5m (typ.) Input capacitance Ciss=4360pF (typ.) 4V drive Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --60 V Gate-to-Source Voltage ... See More ⇒

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2SJ661-DL-1E

Ordering number EN8586 2SJ661 P-Channel Silicon MOSFET General-Purpose Switching Device 2SJ661 Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --... See More ⇒

 8.2. Size:373K  onsemi
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2SJ661-DL-1E

Ordering number EN8586A 2SJ661 P-Channel Power MOSFET http //onsemi.com 60V, 38A, 39m , TO-262-3L/TO-263-2L Features ON-resistance RDS(on)1=29.5m (typ.) Input capacitance Ciss=4360pF (typ.) 4V drive Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --60 V Gate-to-Source Voltage ... See More ⇒

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Detailed specifications: 2SJ690, 2V7002K, 2V7002L, 2V7002W, 2SJ650, 2SJ651, 2SJ652-1E, 2SJ661-1E, IRF840, 2SJ661-DL-E, 2SJ673, 2SJ683, 2SJ176, 2SJ177, 2SJ182L, 2SJ182S, 2SJ183

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