2SJ661-DL-1E MOSFET Datasheet: P-Ch, 60V, 38A. Full specification with pinout and replacement list

2SJ661-DL-1E Specs and Replacement

   Type Designator: 2SJ661-DL-1E
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 65 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 38 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 285 nS
   Cossⓘ - Output Capacitance: 470 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.039 Ohm
   Package: TO263

2SJ661-DL-1E substitution

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2SJ661-DL-1E datasheet

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Ordering number EN8586A 2SJ661 P-Channel Power MOSFET http //onsemi.com 60V, 38A, 39m , TO-262-3L/TO-263-2L Features ON-resistance RDS(on)1=29.5m (typ.) Input capacitance Ciss=4360pF (typ.) 4V drive Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --60 V Gate-to-Source Voltage ... See More ⇒

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Ordering number EN8586 2SJ661 P-Channel Silicon MOSFET General-Purpose Switching Device 2SJ661 Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --... See More ⇒

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