2SJ661-DL-1E MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SJ661-DL-1E
Marking Code: J661
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 65 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 38 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 80 nC
Rise Time (tr): 285 nS
Drain-Source Capacitance (Cd): 470 pF
Maximum Drain-Source On-State Resistance (Rds): 0.039 Ohm
Package: TO263
2SJ661-DL-1E Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SJ661-DL-1E Datasheet (PDF)
2sj661-1e.pdf
Ordering number : EN8586A2SJ661P-Channel Power MOSFEThttp://onsemi.com 60V, 38A, 39m , TO-262-3L/TO-263-2LFeatures ON-resistance RDS(on)1=29.5m (typ.) Input capacitance Ciss=4360pF (typ.) 4V driveSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --60 VGate-to-Source Voltage
2sj661.pdf
Ordering number : EN8586 2SJ661P-Channel Silicon MOSFETGeneral-Purpose Switching Device2SJ661ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --
2sj661.pdf
Ordering number : EN8586A2SJ661P-Channel Power MOSFEThttp://onsemi.com 60V, 38A, 39m , TO-262-3L/TO-263-2LFeatures ON-resistance RDS(on)1=29.5m (typ.) Input capacitance Ciss=4360pF (typ.) 4V driveSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --60 VGate-to-Source Voltage
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
