2SJ302-Z PDF and Equivalents Search

 

2SJ302-Z Specs and Replacement

Type Designator: 2SJ302-Z

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 170 nS

Cossⓘ - Output Capacitance: 670 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: TO263

2SJ302-Z substitution

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2SJ302-Z datasheet

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2SJ302-Z

SMD Type MOSFET P-Channel MOSFET 2SJ302-ZJ Features VDS (V) =-60V ID =-16 A RDS(ON) 100m (VGS =-10V) RDS(ON) 240m (VGS =-4V) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS -20,+10 Continuous Drain Current ID -16 A Pulsed Drain Current (Note.1) IDM -64 Power Dissi... See More ⇒

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 9.1. Size:335K  toshiba
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2SJ302-Z

2SJ305 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ305 High Speed Switching Applications Unit mm Analog Applications High input impedance Low gate threshold voltage. V = -0.5 -1.5 V th Excellent switching times. t = 0.06 s (typ.) on t = 0.15 s (typ.) off Low drain-source ON resistance R = 2.4 (typ.) DS (ON) Small packa... See More ⇒

Detailed specifications: 2SJ239, 2SJ240, 2SJ241, 2SJ296L, 2SJ296S, 2SJ297L, 2SJ297S, 2SJ492, 2N60, 2SJ314-01L, 2SJ314-01S, 2SJ324-Z, 2SJ325-Z, 2SJ326-Z, 2SJ327-Z, 2SJ328-Z, 2SJ332L

Keywords - 2SJ302-Z MOSFET specs

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