AO4264E MOSFET Datasheet: N-Ch, 60V, 13.5A. Full specification with pinout and replacement list

AO4264E Specs and Replacement

Type Designator: AO4264E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 13.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18.5 nS

Cossⓘ - Output Capacitance: 300 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0098 Ohm

Package: SO-8

AO4264E substitution

- MOSFET ⓘ Cross-Reference Search

AO4264E datasheet

..1. Size:390K aosemi
ao4264e.pdf pdf_icon

... See More ⇒

8.1. Size:332K aosemi
ao4264c.pdf pdf_icon

AO4264C TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 11A Low RDS(ON) Logic Level Gate Drive RDS(ON) (at VGS=10V) ... See More ⇒

8.2. Size:367K aosemi
ao4264.pdf pdf_icon

AO4264 60V N-Channel AlphaMOS General Description Product Summary VDS Trench Power AlphaMOS ( MOS MV) technology 60V Low RDS(ON) ID (at VGS=10V) 12A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

8.3. Size:2479K kexin
ao4264.pdf pdf_icon

SMD Type MOSFET N-Channel MOSFET AO4264 (KO4264) SOP-8 Features VDS (V) = 60V ID = 12 A (VGS = 10V) RDS(ON) 11m (VGS = 10V) 1.50 0.15 RDS(ON) 13.5m (VGS = 4.5V) 1 Source 5 Drain 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate D G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 60 V Gat... See More ⇒

Detailed specifications: AO3457, AO3459, AO3493, AO3494, AO3495, AO3498, AO3499, AO4262E, IRF640, AO4266E, AO4268, AO4290A, AO4292E, AO4294, AO4294A, AO4296, AO4402G