AO4264E Datasheet and Replacement
Type Designator: AO4264E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 13.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 18.5 nS
Cossⓘ - Output Capacitance: 300 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0098 Ohm
Package: SO-8
- MOSFET Cross-Reference Search
AO4264E Datasheet (PDF)
ao4264e.pdf

AO4264ETM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 13.5A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
ao4264c.pdf

AO4264CTM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 11A Low RDS(ON) Logic Level Gate Drive RDS(ON) (at VGS=10V)
ao4264.pdf

AO426460V N-Channel AlphaMOSGeneral Description Product SummaryVDS Trench Power AlphaMOS (MOS MV) technology 60V Low RDS(ON) ID (at VGS=10V) 12A Low Gate Charge RDS(ON) (at VGS=10V)
ao4264.pdf

SMD Type MOSFETN-Channel MOSFETAO4264 (KO4264)SOP-8 Features VDS (V) = 60V ID = 12 A (VGS = 10V) RDS(ON) 11m (VGS = 10V)1.50 0.15 RDS(ON) 13.5m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 60V Gat
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: NP82N06MLG | STD60NF3L | BSC150N03LDG | 2SK3538 | NCEP85T16 | KP507A | 2SK3339-01
Keywords - AO4264E MOSFET datasheet
AO4264E cross reference
AO4264E equivalent finder
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AO4264E replacement
History: NP82N06MLG | STD60NF3L | BSC150N03LDG | 2SK3538 | NCEP85T16 | KP507A | 2SK3339-01



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