IRFD120 Specs and Replacement
Type Designator: IRFD120
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1.3 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 27 nS
Cossⓘ - Output Capacitance: 150 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.27 Ohm
Package: HD-1
IRFD120 substitution
IRFD120 datasheet
irfd120pbf.pdf
PD- 95928 IRFD120PbF Lead-Free 10/27/04 Document Number 91128 www.vishay.com 1 IRFD120PbF Document Number 91128 www.vishay.com 2 IRFD120PbF Document Number 91128 www.vishay.com 3 IRFD120PbF Document Number 91128 www.vishay.com 4 IRFD120PbF Document Number 91128 www.vishay.com 5 IRFD120PbF Document Number 91128 www.vishay.com 6 IRFD120PbF Peak Diode Recovery... See More ⇒
irfd120 sihfd120.pdf
IRFD120, SiHFD120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.27 RoHS* For Automatic Insertion Qg (Max.) (nC) 16 COMPLIANT End Stackable Qgs (nC) 4.4 Qgd (nC) 7.7 175 C Operating Temperature Configuration Single Fast Switching D Ease of Par... See More ⇒
irfd120pbf sihfd120.pdf
IRFD120, SiHFD120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.27 RoHS* For Automatic Insertion Qg (Max.) (nC) 16 COMPLIANT End Stackable Qgs (nC) 4.4 Qgd (nC) 7.7 175 C Operating Temperature Configuration Single Fast Switching D Ease of Par... See More ⇒
Detailed specifications: IRFBF30 , IRFBG20 , IRFBG30 , IRFBL10N60A , IRFBL12N50A , IRFD014 , IRFD024 , IRFD110 , RU7088R , IRFD210 , IRFD214 , IRFD220 , IRFD224 , IRFD310 , IRFD320 , IRFD420 , IRFD9014 .
Keywords - IRFD120 MOSFET specs
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