AO4862E
MOSFET. Datasheet pdf. Equivalent
Type Designator: AO4862E
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.7
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 4.5
A
trⓘ - Rise Time: 5.5
nS
Cossⓘ -
Output Capacitance: 35
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.046
Ohm
Package:
SO-8
AO4862E
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AO4862E
Datasheet (PDF)
..1. Size:334K aosemi
ao4862e.pdf 
AO4862E30V Dual N-Channel AlphaMOSGeneral Description Product SummaryVDS Trench Power AlphaMOS (MOS LV) technology 30V Low RDS(ON) ID (at VGS=10V) 4.5A Low Gate Charge RDS(ON) (at VGS=10V)
8.1. Size:403K aosemi
ao4862.pdf
AO486230V Dual N-Channel AlphaMOSGeneral Description Product SummaryVDS Trench Power AlphaMOS (MOS LV) technology 30V Low RDS(ON) ID (at VGS=10V) 4.5A Low Gate Charge RDS(ON) (at VGS=10V)
8.2. Size:986K kexin
ao4862.pdf
SMD Type MOSFETDual N-Channel MOSFETAO4862 (KO4862)SOP-8 Unit:mm Features VDS (V) = 30V1.50 0.15 ID = 4.5A (VGS = 10V) RDS(ON) 50m (VGS = 10V)1 S2 5 D1 RDS(ON) 68m (VGS = 4.5V)6 D12 G27 D23 S18 D24 G1G1 G2D1 D2S1 S2 Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30V Gate-
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