All MOSFET. AO4862E Datasheet

 

AO4862E Datasheet and Replacement


   Type Designator: AO4862E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   tr ⓘ - Rise Time: 5.5 nS
   Cossⓘ - Output Capacitance: 35 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.046 Ohm
   Package: SO-8
 

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AO4862E Datasheet (PDF)

 ..1. Size:334K  aosemi
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AO4862E

AO4862E30V Dual N-Channel AlphaMOSGeneral Description Product SummaryVDS Trench Power AlphaMOS (MOS LV) technology 30V Low RDS(ON) ID (at VGS=10V) 4.5A Low Gate Charge RDS(ON) (at VGS=10V)

 8.1. Size:403K  aosemi
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AO4862E

AO486230V Dual N-Channel AlphaMOSGeneral Description Product SummaryVDS Trench Power AlphaMOS (MOS LV) technology 30V Low RDS(ON) ID (at VGS=10V) 4.5A Low Gate Charge RDS(ON) (at VGS=10V)

 8.2. Size:986K  kexin
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AO4862E

SMD Type MOSFETDual N-Channel MOSFETAO4862 (KO4862)SOP-8 Unit:mm Features VDS (V) = 30V1.50 0.15 ID = 4.5A (VGS = 10V) RDS(ON) 50m (VGS = 10V)1 S2 5 D1 RDS(ON) 68m (VGS = 4.5V)6 D12 G27 D23 S18 D24 G1G1 G2D1 D2S1 S2 Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30V Gate-

Datasheet: AO4294 , AO4294A , AO4296 , AO4402G , AO4405E , AO4423-L , AO4630 , AO4840E , IRFB4115 , AO6411 , AO6602G , AO6608 , AOB12N65L , AOB2140L , AOB2146L , AOB2502L , AOB2904 .

Keywords - AO4862E MOSFET datasheet

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