All MOSFET. AOD558 Datasheet

 

AOD558 Datasheet and Replacement


   Type Designator: AOD558
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   tr ⓘ - Rise Time: 14.7 nS
   Cossⓘ - Output Capacitance: 483 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0054 Ohm
   Package: TO-252
 

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AOD558 Datasheet (PDF)

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AOD558

AOD55830V N-Channel MOSFETGeneral Description Product SummaryVDS30V Latest Trench Power MOSFET technology Very Low RDS(on) at 4.5V VGS ID (at VGS=10V) 50A Low Gate Charge RDS(ON) (at VGS=10V)

Datasheet: AOC3862 , AOC3864 , AOC3868 , AOC3870 , AOD409G , AOD424G , AOD442G , AOD522P , 4435 , AOD607A , AOD661 , AOD294A , AOD296A , AOD2146 , AOD2610E , AOD2904 , AOD2910E .

History: IRFS631 | DMN3035LWN | KQB6N25 | SE40160A | 2SK806 | FQD2N50TF | AO6411

Keywords - AOD558 MOSFET datasheet

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