AOE6930 Datasheet. Specs and Replacement

Type Designator: AOE6930

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 24 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 22 A

Electrical Characteristics

tr ⓘ - Rise Time: 12.5 nS

Cossⓘ - Output Capacitance: 480 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0043 Ohm

Package: DFN5X6E

AOE6930 substitution

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AOE6930 datasheet

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AOE6930

AOE6930 30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary Q1 Q2 Bottom Source Technology VDS 30V 30V Very Low RDS(ON) ID (at VGS=10V) 22A 85A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

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aoe6930.pdf pdf_icon

AOE6930

AOE6930 30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary Q1 Q2 Bottom Source Technology VDS 30V 30V Very Low RDS(ON) ID (at VGS=10V) 22A 85A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

 8.1. Size:477K  aosemi
aoe6932.pdf pdf_icon

AOE6930

AOE6932 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 Bottom Source Technology VDS 30V 30V Very Low RDS(ON) ID (at VGS=10V) 55A 85A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

 8.2. Size:486K  aosemi
aoe6936.pdf pdf_icon

AOE6930

AOE6936 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 Bottom Source Technology VDS 30V 30V Very Low RDS(ON) ID (at VGS=10V) 55A 85A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

Detailed specifications: AOD294A, AOD296A, AOD2146, AOD2610E, AOD2904, AOD2910E, AOD66406, AOD4158P, AO4407, AOE6932, AOE6936, AOH3254, AOI294A, AOI296A, AOI2606, AOI2610, AOI2610E

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