AOE6932
MOSFET. Datasheet pdf. Equivalent
Type Designator: AOE6932
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 24
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2
V
|Id|ⓘ - Maximum Drain Current: 55
A
trⓘ - Rise Time: 11.5
nS
Cossⓘ -
Output Capacitance: 380
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.005
Ohm
Package: DFN5X6E
AOE6932
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AOE6932
Datasheet (PDF)
..1. Size:477K aosemi
aoe6932.pdf
AOE693230V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2 Bottom Source TechnologyVDS 30V 30V Very Low RDS(ON) ID (at VGS=10V) 55A 85A Low Gate Charge RDS(ON) (at VGS=10V)
8.1. Size:829K 1
aoe6930.pdf
AOE693030V Dual Asymmetric N-Channel AlphaMOSGeneral Description Product SummaryQ1 Q2 Bottom Source TechnologyVDS 30V 30V Very Low RDS(ON) ID (at VGS=10V) 22A 85A Low Gate Charge RDS(ON) (at VGS=10V)
8.2. Size:486K aosemi
aoe6936.pdf
AOE693630V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2 Bottom Source TechnologyVDS 30V 30V Very Low RDS(ON) ID (at VGS=10V) 55A 85A Low Gate Charge RDS(ON) (at VGS=10V)
8.3. Size:533K aosemi
aoe6930.pdf
AOE693030V Dual Asymmetric N-Channel AlphaMOSGeneral Description Product SummaryQ1 Q2 Bottom Source TechnologyVDS 30V 30V Very Low RDS(ON) ID (at VGS=10V) 22A 85A Low Gate Charge RDS(ON) (at VGS=10V)
Datasheet: IRFP360LC
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