AOE6932 Datasheet. Specs and Replacement

Type Designator: AOE6932

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 24 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 55 A

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V

tr ⓘ - Rise Time: 11.5 nS

Cossⓘ - Output Capacitance: 380 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm

Package: DFN5X6E

AOE6932 substitution

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AOE6932 datasheet

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AOE6932

AOE6932 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 Bottom Source Technology VDS 30V 30V Very Low RDS(ON) ID (at VGS=10V) 55A 85A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

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AOE6932

AOE6930 30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary Q1 Q2 Bottom Source Technology VDS 30V 30V Very Low RDS(ON) ID (at VGS=10V) 22A 85A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

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AOE6932

AOE6936 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 Bottom Source Technology VDS 30V 30V Very Low RDS(ON) ID (at VGS=10V) 55A 85A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

 8.3. Size:533K  aosemi
 aoe6930.pdf pdf_icon

AOE6932

AOE6930 30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary Q1 Q2 Bottom Source Technology VDS 30V 30V Very Low RDS(ON) ID (at VGS=10V) 22A 85A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

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Detailed specifications: AOD296A, AOD2146, AOD2610E, AOD2904, AOD2910E, AOD66406, AOD4158P, AOE6930, BS170, AOE6936, AOH3254, AOI294A, AOI296A, AOI2606, AOI2610, AOI2610E, AOI2614

Keywords - AOE6932 MOSFET specs

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