All MOSFET. AOI66406 Datasheet

 

AOI66406 MOSFET. Datasheet pdf. Equivalent


   Type Designator: AOI66406
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 52 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 60 A
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 245 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0061 Ohm
   Package: TO-252

 AOI66406 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AOI66406 Datasheet (PDF)

 ..1. Size:365K  aosemi
 aoi66406.pdf

AOI66406 AOI66406

AOD66406/AOI66406TM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 60A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)

 ..2. Size:273K  inchange semiconductor
 aoi66406.pdf

AOI66406 AOI66406

isc N-Channel MOSFET Transistor AOI66406FEATURESDrain Current I = 60A@ T =25D CDrain Source Voltage-: V =40V(Min)DSSStatic Drain-Source On-Resistance: R =6.1m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: AOD425 | IXTP1N80

 

 
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