AOI66406 Datasheet and Replacement
Type Designator: AOI66406
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 52 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 60 A
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 245 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0061 Ohm
Package: TO-252
AOI66406 substitution
AOI66406 Datasheet (PDF)
aoi66406.pdf

AOD66406/AOI66406TM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 60A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)
aoi66406.pdf

isc N-Channel MOSFET Transistor AOI66406FEATURESDrain Current I = 60A@ T =25D CDrain Source Voltage-: V =40V(Min)DSSStatic Drain-Source On-Resistance: R =6.1m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
Datasheet: AOE6936 , AOH3254 , AOI294A , AOI296A , AOI2606 , AOI2610 , AOI2610E , AOI2614 , 4N60 , AOK60N30L , AOL1404G , AOL1454G , AON2392 , AON3414 , AON3820 , AON5802BG , AON5816 .
History: SWN6N70DA | SSS1206 | AOY66919 | APS04N60H | PNM3FD201E0 | STFU18N65M2 | LP3415ELT1G
Keywords - AOI66406 MOSFET datasheet
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History: SWN6N70DA | SSS1206 | AOY66919 | APS04N60H | PNM3FD201E0 | STFU18N65M2 | LP3415ELT1G



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