All MOSFET. AOI66406 Datasheet

 

AOI66406 Datasheet and Replacement


   Type Designator: AOI66406
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 52 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 245 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0061 Ohm
   Package: TO-252
 

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AOI66406 Datasheet (PDF)

 ..1. Size:365K  aosemi
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AOI66406

AOD66406/AOI66406TM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 60A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)

 ..2. Size:273K  inchange semiconductor
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AOI66406

isc N-Channel MOSFET Transistor AOI66406FEATURESDrain Current I = 60A@ T =25D CDrain Source Voltage-: V =40V(Min)DSSStatic Drain-Source On-Resistance: R =6.1m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

Datasheet: AOE6936 , AOH3254 , AOI294A , AOI296A , AOI2606 , AOI2610 , AOI2610E , AOI2614 , 7N60 , AOK60N30L , AOL1404G , AOL1454G , AON2392 , AON3414 , AON3820 , AON5802BG , AON5816 .

History: AP5602P | AUIRFIZ44N | SM140R50CT1TL | BLP04N10-P | DHB16N06 | IXTT30N50L | AP60SL650AFI

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