All MOSFET. AON6262E Datasheet

 

AON6262E Datasheet and Replacement


   Type Designator: AON6262E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 40 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 520 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0062 Ohm
   Package: DFN5X6
      - MOSFET Cross-Reference Search

 

AON6262E Datasheet (PDF)

 ..1. Size:334K  1
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AON6262E

AON6262ETM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 40A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 ..2. Size:334K  aosemi
 aon6262e.pdf pdf_icon

AON6262E

AON6262ETM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 40A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 8.1. Size:368K  aosemi
 aon6266.pdf pdf_icon

AON6262E

AON626660V N-Channel AlphaMOSGeneral Description Product SummaryVDS Trench Power AlphaMOS (MOS MV) technology 60V Low RDS(ON) ID (at VGS=10V) 30A Low Gate Charge RDS(ON) (at VGS=10V)

 8.2. Size:347K  aosemi
 aon6264e.pdf pdf_icon

AON6262E

AON6264ETM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 28A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

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History: AOLF66910 | AON6366E | FDM50R120AN4G | FDD86252 | FDFS2P103 | AON6276 | FDFMA2P857

Keywords - AON6262E MOSFET datasheet

 AON6262E cross reference
 AON6262E equivalent finder
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