AON6366E Datasheet. Specs and Replacement

Type Designator: AON6366E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 46 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 34 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 330 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0037 Ohm

Package: DFN5X6

AON6366E substitution

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AON6366E datasheet

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AON6366E

AON6366E 30V N-Channel AlphaMOS General Description Product Summary VDS Trench Power AlphaMOS ( MOS LV) technology 30V Low RDS(ON) ID (at VGS=10V) 34A Optimized for load switch RDS(ON) (at VGS=10V) ... See More ⇒

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aon6362.pdf pdf_icon

AON6366E

AON6362 30V N-Channel MOSFET General Description Product Summary VDS Trench Power MOS Technology 30V Low RDS(ON) ID (at VGS=10V) 60A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

 8.2. Size:268K  aosemi
aon6360.pdf pdf_icon

AON6366E

AON6360 30V N-Channel AlphaMOS General Description Product Summary VDS Trench Power AlphaMOS (enhanced MOS LV) technology 30V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

 8.3. Size:265K  aosemi
aon6368.pdf pdf_icon

AON6366E

AON6368 30V N-Channel MOSFET General Description Product Summary VDS Trench Power MOS Technology 30V Low RDS(ON) ID (at VGS=10V) 52A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

Detailed specifications: AON6276, AON6284A, AON6312, AON6314, AON6354, AON6358, AON6360, AON6362, IRF730, AON6368, AON6370, AON6372, AON6380, AON6382, AON6384, AON6406, AON6528

Keywords - AON6366E MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.