AON6366E Datasheet and Replacement
Type Designator: AON6366E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 46 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 34 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 330 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0037 Ohm
Package: DFN5X6
AON6366E substitution
AON6366E Datasheet (PDF)
aon6366e.pdf

AON6366E30V N-Channel AlphaMOSGeneral Description Product SummaryVDS Trench Power AlphaMOS (MOS LV) technology 30V Low RDS(ON) ID (at VGS=10V) 34A Optimized for load switch RDS(ON) (at VGS=10V)
aon6362.pdf

AON636230V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOS Technology 30V Low RDS(ON) ID (at VGS=10V) 60A Low Gate Charge RDS(ON) (at VGS=10V)
aon6360.pdf

AON636030V N-Channel AlphaMOSGeneral Description Product SummaryVDS Trench Power AlphaMOS (enhanced MOS LV) technology 30V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)
aon6368.pdf

AON636830V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOS Technology 30V Low RDS(ON) ID (at VGS=10V) 52A Low Gate Charge RDS(ON) (at VGS=10V)
Datasheet: AON6276 , AON6284A , AON6312 , AON6314 , AON6354 , AON6358 , AON6360 , AON6362 , IRFP064N , AON6368 , AON6370 , AON6372 , AON6380 , AON6382 , AON6384 , AON6406 , AON6528 .
History: SDF5N100JAA | 2P829J9 | AOLF66417
Keywords - AON6366E MOSFET datasheet
AON6366E cross reference
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History: SDF5N100JAA | 2P829J9 | AOLF66417



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