AON6384
MOSFET. Datasheet pdf. Equivalent
Type Designator: AON6384
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 36
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2
V
|Id|ⓘ - Maximum Drain Current: 83
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 11
nS
Cossⓘ -
Output Capacitance: 360
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0033
Ohm
Package: DFN5X6EP2
AON6384
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AON6384
Datasheet (PDF)
..1. Size:344K aosemi
aon6384.pdf
AON638430V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 83A Low Gate Charge RDS(ON) (at VGS=10V)
8.1. Size:339K 1
aon6382.pdf
AON638230V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)
8.2. Size:368K 1
aon6380.pdf
AON638030V N-Channel AlphaMOSGeneral Description Product SummaryVDS Trench Power AlphaMOS (MOS LV) technology 30V Low RDS(ON) ID (at VGS=10V) 24A Low Gate Charge RDS(ON) (at VGS=10V)
8.3. Size:339K aosemi
aon6382.pdf
AON638230V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)
8.4. Size:368K aosemi
aon6380.pdf
AON638030V N-Channel AlphaMOSGeneral Description Product SummaryVDS Trench Power AlphaMOS (MOS LV) technology 30V Low RDS(ON) ID (at VGS=10V) 24A Low Gate Charge RDS(ON) (at VGS=10V)
Datasheet: IRFP360LC
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