All MOSFET. AON6590 Datasheet

 

AON6590 MOSFET. Datasheet pdf. Equivalent


   Type Designator: AON6590
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 208 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
   |Id|ⓘ - Maximum Drain Current: 100 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 26 nS
   Cossⓘ - Output Capacitance: 1438 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.00099 Ohm
   Package: DFN5X6

 AON6590 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AON6590 Datasheet (PDF)

 ..1. Size:217K  aosemi
 aon6590.pdf

AON6590 AON6590

AON659040V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 40V Low RDS(ON) ID (at VGS=10V) 100A Low Gate Charge RDS(ON) (at VGS=10V)

 0.1. Size:355K  aosemi
 aon6590a.pdf

AON6590 AON6590

AON6590A40V N-Channel MOSFETGeneral Description Product SummaryVDS40V Trench Power MV MOSFET technology Low RDS(ON) ID (at VGS=10V) 300A Low Gate Charge RDS(ON) (at VGS=10V)

 8.1. Size:340K  aosemi
 aon6596.pdf

AON6590 AON6590

AON659630V N-Channel AlphaMOSGeneral Description Product SummaryVDS Trench Power AlphaMOS technology 30V Low RDS(ON) ID (at VGS=10V) 35A Low Gate Charge RDS(ON) (at VGS=10V)

 8.2. Size:358K  aosemi
 aon6594.pdf

AON6590 AON6590

AON659430V N-Channel AlphaMOSGeneral Description Product SummaryVDS Trench Power AlphaMOS (MOS LV) technology 30V Low RDS(ON) ID (at VGS=10V) 35A Low Gate Charge RDS(ON) (at VGS=10V)

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: 2SJ197

 

 
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