All MOSFET. AON6661 Datasheet

 

AON6661 Datasheet and Replacement


   Type Designator: AON6661
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 12.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 16 A
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 125 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: DFN5X6EP2
 

 AON6661 substitution

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AON6661 Datasheet (PDF)

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AON6661

AON666130V Dual Complementary MOSFETGeneral Description Product SummaryQ1 Q2VDS 30V -30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 16A -16A Low Gate Charge RDS(ON) (at VGS=10V)

 8.1. Size:565K  aosemi
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AON6661

AON666730V Dual Complementary MOSFETGeneral Description Product SummaryQ1 Q2VDS 30V -30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 16A -16A Low Gate Charge RDS(ON) (at VGS=10V)

Datasheet: AON6380 , AON6382 , AON6384 , AON6406 , AON6528 , AON6548 , AON6560 , AON6590 , IRF1404 , AON6667 , AON6734 , AON6764 , AON6792 , AON6794 , AON6796 , AON6982 , AON6984 .

History: NCE20P70G

Keywords - AON6661 MOSFET datasheet

 AON6661 cross reference
 AON6661 equivalent finder
 AON6661 lookup
 AON6661 substitution
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