AON6661 Datasheet. Specs and Replacement
Type Designator: AON6661
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 12.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 16 A
Electrical Characteristics
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 125 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
Package: DFN5X6EP2
AON6661 substitution
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AON6661 datasheet
aon6661.pdf
AON6661 30V Dual Complementary MOSFET General Description Product Summary Q1 Q2 VDS 30V -30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 16A -16A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒
aon6667.pdf
AON6667 30V Dual Complementary MOSFET General Description Product Summary Q1 Q2 VDS 30V -30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 16A -16A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒
Detailed specifications: AON6380, AON6382, AON6384, AON6406, AON6528, AON6548, AON6560, AON6590, IRF1404, AON6667, AON6734, AON6764, AON6792, AON6794, AON6796, AON6982, AON6984
Keywords - AON6661 MOSFET specs
AON6661 cross reference
AON6661 equivalent finder
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AON6661 substitution
AON6661 replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: SFB083N80CC2 | OSG65R2KAF | NCEP4090AGU
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