AON6667 Datasheet. Specs and Replacement

Type Designator: AON6667

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 10 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 16 A

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 67 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm

Package: DFN5X6EP2

AON6667 substitution

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AON6667 datasheet

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AON6667

AON6667 30V Dual Complementary MOSFET General Description Product Summary Q1 Q2 VDS 30V -30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 16A -16A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

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AON6667

AON6661 30V Dual Complementary MOSFET General Description Product Summary Q1 Q2 VDS 30V -30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 16A -16A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

Detailed specifications: AON6382, AON6384, AON6406, AON6528, AON6548, AON6560, AON6590, AON6661, IRLZ44N, AON6734, AON6764, AON6792, AON6794, AON6796, AON6982, AON6984, AON6992

Keywords - AON6667 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.