All MOSFET. AONE36182 Datasheet

 

AONE36182 Datasheet and Replacement


   Type Designator: AONE36182
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 60 A
   trⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 250 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0046 Ohm
   Package: DFN3.3X3.3AEP2
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AONE36182 Datasheet (PDF)

 ..1. Size:436K  aosemi
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AONE36182

AONE3618225V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2VDS 25V 25V Bottom Source Technology Very Low RDS(ON) ID (at VGS=10V) 17A 34A High Current Capability RDS(ON) (at VGS=10V)

 7.1. Size:436K  aosemi
 aone36132.pdf pdf_icon

AONE36182

AONE3613225V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2VDS 25V 25V Bottom Source Technology Very Low RDS(ON) ID (at VGS=10V) 17A 34A High Current Capability RDS(ON) (at VGS=10V)

 9.1. Size:693K  aosemi
 aone38132.pdf pdf_icon

AONE36182

AONE3813225V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2VDS 25V 25V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 60A 134A Low Gate Charge RDS(ON) (at VGS=10V)

Datasheet: AON7380 , AON7404G , AON7422G , AON7442 , AON7518 , AON7566 , AON7568 , AONE36132 , K4145 , AONR21307 , AONR21357 , AONR32314 , AONR36366 , AONR36368 , AONR62818 , AONR66406 , AONS21307 .

History: 2SK4006-01SJ | GSM4946W | NCE1216 | FDMS030N06B | CS7N65FA9D | 12N25 | BSP92P

Keywords - AONE36182 MOSFET datasheet

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