All MOSFET. AOSD62666E Datasheet

 

AOSD62666E Datasheet and Replacement


   Type Designator: AOSD62666E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   |Id| ⓘ - Maximum Drain Current: 9.5 A
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 220 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0145 Ohm
   Package: SO8
 

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AOSD62666E Datasheet (PDF)

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AOSD62666E

AOSD62666ETM60V Dual N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 9.5A Low RDS(ON) Logic Level Gate Drive RDS(ON) (at VGS=10V)

Datasheet: AONS32314 , AONS62602 , AONS62614 , AONS62618 , AONS62922 , AONS66402 , AONS66406 , AONS66916 , 18N50 , AOSP21307 , AOSP21357 , AOSP32314 , AOSP32368 , AOSP66406 , AOT2140L , AOT2142L , AOT2146L .

History: CS1N60C3H

Keywords - AOSD62666E MOSFET datasheet

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