AOSD62666E Datasheet. Specs and Replacement

Type Designator: AOSD62666E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 9.5 A

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 220 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0145 Ohm

Package: SO8

AOSD62666E substitution

- MOSFET ⓘ Cross-Reference Search

 

AOSD62666E datasheet

 ..1. Size:356K  aosemi
 aosd62666e.pdf pdf_icon

AOSD62666E

AOSD62666E TM 60V Dual N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 9.5A Low RDS(ON) Logic Level Gate Drive RDS(ON) (at VGS=10V) ... See More ⇒

Detailed specifications: AONS32314, AONS62602, AONS62614, AONS62618, AONS62922, AONS66402, AONS66406, AONS66916, BS170, AOSP21307, AOSP21357, AOSP32314, AOSP32368, AOSP66406, AOT2140L, AOT2142L, AOT2146L

Keywords - AOSD62666E MOSFET specs

 AOSD62666E cross reference

 AOSD62666E equivalent finder

 AOSD62666E pdf lookup

 AOSD62666E substitution

 AOSD62666E replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility