All MOSFET. AOSD62666E Datasheet

 

AOSD62666E MOSFET. Datasheet pdf. Equivalent


   Type Designator: AOSD62666E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 9.5 A
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 220 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0145 Ohm
   Package: SO8

 AOSD62666E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AOSD62666E Datasheet (PDF)

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 aosd62666e.pdf

AOSD62666E AOSD62666E

AOSD62666ETM60V Dual N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 9.5A Low RDS(ON) Logic Level Gate Drive RDS(ON) (at VGS=10V)

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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