All MOSFET. AOSP21307 Datasheet

 

AOSP21307 Datasheet and Replacement


   Type Designator: AOSP21307
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
   |Id| ⓘ - Maximum Drain Current: 14 A
   tr ⓘ - Rise Time: 13.3 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0115 Ohm
   Package: SO8
 

 AOSP21307 substitution

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AOSP21307 Datasheet (PDF)

 ..1. Size:308K  aosemi
 aosp21307.pdf pdf_icon

AOSP21307

AOSP2130730V P-Channel MOSFETGeneral Description Product SummaryVDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -14A High Current Capability RDS(ON) (at VGS=-10V)

 7.1. Size:258K  aosemi
 aosp21321.pdf pdf_icon

AOSP21307

AOSP2132130V P-Channel MOSFETGeneral Description Product SummaryVDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -11A High Current Capability RDS(ON) (at VGS=-10V)

 7.2. Size:295K  aosemi
 aosp21357.pdf pdf_icon

AOSP21307

AOSP2135730V P-Channel MOSFETGeneral Description Product SummaryVDS Latest advanced trench technology -30V Low RDS(ON) ID (at VGS=-10V) -16A High Current capability RDS(ON) (at VGS=-10V)

Datasheet: AONS62602 , AONS62614 , AONS62618 , AONS62922 , AONS66402 , AONS66406 , AONS66916 , AOSD62666E , 10N65 , AOSP21357 , AOSP32314 , AOSP32368 , AOSP66406 , AOT2140L , AOT2142L , AOT2146L , AOT2502L .

Keywords - AOSP21307 MOSFET datasheet

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