AOSP21307 Datasheet. Specs and Replacement

Type Designator: AOSP21307

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 14 A

Electrical Characteristics

tr ⓘ - Rise Time: 13.3 nS

Cossⓘ - Output Capacitance: 300 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0115 Ohm

Package: SO8

AOSP21307 substitution

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AOSP21307 datasheet

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AOSP21307

AOSP21307 30V P-Channel MOSFET General Description Product Summary VDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -14A High Current Capability RDS(ON) (at VGS=-10V) ... See More ⇒

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AOSP21307

AOSP21321 30V P-Channel MOSFET General Description Product Summary VDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -11A High Current Capability RDS(ON) (at VGS=-10V) ... See More ⇒

 7.2. Size:375K  aosemi
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AOSP21307

AOSP21311C 30V P-Channel MOSFET General Description Product Summary VDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -6.5A High Current Capability RDS(ON) (at VGS=-10V) ... See More ⇒

 7.3. Size:295K  aosemi
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AOSP21307

AOSP21357 30V P-Channel MOSFET General Description Product Summary VDS Latest advanced trench technology -30V Low RDS(ON) ID (at VGS=-10V) -16A High Current capability RDS(ON) (at VGS=-10V) ... See More ⇒

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Detailed specifications: AONS62602, AONS62614, AONS62618, AONS62922, AONS66402, AONS66406, AONS66916, AOSD62666E, 4N60, AOSP21357, AOSP32314, AOSP32368, AOSP66406, AOT2140L, AOT2142L, AOT2146L, AOT2502L

Keywords - AOSP21307 MOSFET specs

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