All MOSFET. AOSP32368 Datasheet

 

AOSP32368 Datasheet and Replacement


   Type Designator: AOSP32368
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 16 A
   tr ⓘ - Rise Time: 10.5 nS
   Cossⓘ - Output Capacitance: 245 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: SO8
 

 AOSP32368 substitution

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AOSP32368 Datasheet (PDF)

 ..1. Size:431K  aosemi
 aosp32368.pdf pdf_icon

AOSP32368

AOSP3236830V N-Channel MOSFETGeneral Description Product SummaryVDS Low RDS(ON) 30V Optimized for Load Switch ID (at VGS=10V) 16A High Current Capability RDS(ON) (at VGS=10V)

 7.1. Size:322K  aosemi
 aosp32320c.pdf pdf_icon

AOSP32368

AOSP32320C30V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 8.5A Low Gate Charge RDS(ON) (at VGS=10V)

 7.2. Size:319K  aosemi
 aosp32314.pdf pdf_icon

AOSP32368

AOSP3231430V N-Channel MOSFETGeneral Description Product SummaryVDS Latest advanced trench technology 30V Low RDS(ON) ID (at VGS=10V) 14.5A High Current capability RDS(ON) (at VGS=10V)

 9.1. Size:326K  aosemi
 aosp36326c.pdf pdf_icon

AOSP32368

AOSP36326C30V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 12A Low Gate Charge RDS(ON) (at VGS=10V)

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Datasheet: AONS62922 , AONS66402 , AONS66406 , AONS66916 , AOSD62666E , AOSP21307 , AOSP21357 , AOSP32314 , 5N65 , AOSP66406 , AOT2140L , AOT2142L , AOT2146L , AOT2502L , AOT2904 , AOT2906 , AOTF190A60L .

History: BLL1214-250R | IPW60R125CP | 2SK3479-Z

Keywords - AOSP32368 MOSFET datasheet

 AOSP32368 cross reference
 AOSP32368 equivalent finder
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 AOSP32368 substitution
 AOSP32368 replacement

 

 
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