All MOSFET. AOSP32368 Datasheet

 

AOSP32368 Datasheet and Replacement


   Type Designator: AOSP32368
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 16 A
   trⓘ - Rise Time: 10.5 nS
   Cossⓘ - Output Capacitance: 245 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: SO8
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AOSP32368 Datasheet (PDF)

 ..1. Size:431K  aosemi
 aosp32368.pdf pdf_icon

AOSP32368

AOSP3236830V N-Channel MOSFETGeneral Description Product SummaryVDS Low RDS(ON) 30V Optimized for Load Switch ID (at VGS=10V) 16A High Current Capability RDS(ON) (at VGS=10V)

 7.1. Size:322K  aosemi
 aosp32320c.pdf pdf_icon

AOSP32368

AOSP32320C30V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 8.5A Low Gate Charge RDS(ON) (at VGS=10V)

 7.2. Size:319K  aosemi
 aosp32314.pdf pdf_icon

AOSP32368

AOSP3231430V N-Channel MOSFETGeneral Description Product SummaryVDS Latest advanced trench technology 30V Low RDS(ON) ID (at VGS=10V) 14.5A High Current capability RDS(ON) (at VGS=10V)

 9.1. Size:326K  aosemi
 aosp36326c.pdf pdf_icon

AOSP32368

AOSP36326C30V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 12A Low Gate Charge RDS(ON) (at VGS=10V)

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History: IRF6201 | AUIRF3808S | AO4406A | GSM4936S | 2SK1993 | P1060AT | ATM2N65TE

Keywords - AOSP32368 MOSFET datasheet

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