AOSP66406 Datasheet. Specs and Replacement
Type Designator: AOSP66406
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 17 A
Electrical Characteristics
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 245 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0066 Ohm
Package: SOIC8
AOSP66406 substitution
- MOSFET ⓘ Cross-Reference Search
AOSP66406 datasheet
aosp66919.pdf
AOSP66919 TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 16A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V) ... See More ⇒
aosp66920.pdf
AOSP66920 TM 100V N-Channel AlphaSGT General Description Product Summary VDS Trench Power AlphaSGTTM technology 100V Low RDS(ON) ID (at VGS=10V) 13.5A Logic Level Driving RDS(ON) (at VGS=10V) ... See More ⇒
aosp66923.pdf
AOSP66923 TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 12A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V) ... See More ⇒
Detailed specifications: AONS66402, AONS66406, AONS66916, AOSD62666E, AOSP21307, AOSP21357, AOSP32314, AOSP32368, 10N65, AOT2140L, AOT2142L, AOT2146L, AOT2502L, AOT2904, AOT2906, AOTF190A60L, AOTF20C60P
Keywords - AOSP66406 MOSFET specs
AOSP66406 cross reference
AOSP66406 equivalent finder
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