AOSP66406 MOSFET. Datasheet pdf. Equivalent
Type Designator: AOSP66406
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 17 A
trⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 245 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0066 Ohm
Package: SOIC8
AOSP66406 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AOSP66406 Datasheet (PDF)
..1. Size:379K aosemi
aosp66406.pdf
aosp66406.pdf
AOSP66406TM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 17A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)
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