All MOSFET. AOSP66406 Datasheet

 

AOSP66406 Datasheet and Replacement


   Type Designator: AOSP66406
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 17 A
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 245 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0066 Ohm
   Package: SOIC8
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AOSP66406 Datasheet (PDF)

 ..1. Size:379K  aosemi
 aosp66406.pdf pdf_icon

AOSP66406

AOSP66406TM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 17A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)

 8.1. Size:312K  aosemi
 aosp66919.pdf pdf_icon

AOSP66406

AOSP66919TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 16A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)

 8.2. Size:268K  aosemi
 aosp66920.pdf pdf_icon

AOSP66406

AOSP66920TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS Trench Power AlphaSGTTM technology 100V Low RDS(ON) ID (at VGS=10V) 13.5A Logic Level Driving RDS(ON) (at VGS=10V)

 8.3. Size:312K  aosemi
 aosp66923.pdf pdf_icon

AOSP66406

AOSP66923TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 12A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)

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Keywords - AOSP66406 MOSFET datasheet

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