AOSP66406 MOSFET. Datasheet pdf. Equivalent
Type Designator: AOSP66406
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 17 A
trⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 245 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0066 Ohm
Package: SOIC8
AOSP66406 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AOSP66406 Datasheet (PDF)
aosp66406.pdf
AOSP66406TM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 17A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)
aosp66919.pdf
AOSP66919TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 16A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)
aosp66920.pdf
AOSP66920TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS Trench Power AlphaSGTTM technology 100V Low RDS(ON) ID (at VGS=10V) 13.5A Logic Level Driving RDS(ON) (at VGS=10V)
aosp66923.pdf
AOSP66923TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 12A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)
aosp66925.pdf
AOSP66925TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology 100V ID (at VGS=10V) 11A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918