AOTF2142L
MOSFET. Datasheet pdf. Equivalent
Type Designator: AOTF2142L
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 41
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3
V
|Id|ⓘ - Maximum Drain Current: 112
A
Tjⓘ - Maximum Junction Temperature: 175
°C
trⓘ - Rise Time: 26
nS
Cossⓘ -
Output Capacitance: 1438
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0019
Ohm
Package:
TO220F
AOTF2142L
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AOTF2142L
Datasheet (PDF)
..1. Size:423K aosemi
aotf2142l.pdf 
AOT2142L/AOTF2142L40V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 40V Low RDS(ON) ID (at VGS=10V) 120A / 112A Low Gate Charge RDS(ON) (at VGS=10V)
..2. Size:201K inchange semiconductor
aotf2142l.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor AOTF2142LFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction lossesOptimized for fast-switching applications100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitch
7.1. Size:301K 1
aotf2144l.pdf
AOTF2144L40V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 40V Low RDS(ON) ID (at VGS=10V) 90A Low Gate Charge RDS(ON) (at VGS=10V)
7.2. Size:332K aosemi
aotf2146l.pdf
AOTF2146LTM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 80A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
7.3. Size:357K aosemi
aotf2144l.pdf
AOTF2144L40V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 40V Low RDS(ON) ID (at VGS=10V) 90A Low Gate Charge RDS(ON) (at VGS=10V)
7.4. Size:250K inchange semiconductor
aotf2146l.pdf
isc N-Channel MOSFET Transistor AOTF2146LFEATURESDrain Current I = 105A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 2.8m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur
7.5. Size:250K inchange semiconductor
aotf2144l.pdf
isc N-Channel MOSFET Transistor AOTF2144LFEATURESDrain Current I = 120A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 2.3m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur
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