Справочник MOSFET. AOTF2142L

 

AOTF2142L MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AOTF2142L
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 41 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 112 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 26 ns
   Cossⓘ - Выходная емкость: 1438 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0019 Ohm
   Тип корпуса: TO220F

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AOTF2142L Datasheet (PDF)

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AOT2142L/AOTF2142L40V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 40V Low RDS(ON) ID (at VGS=10V) 120A / 112A Low Gate Charge RDS(ON) (at VGS=10V)

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INCHANGE SemiconductorIsc N-Channel MOSFET Transistor AOTF2142LFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction lossesOptimized for fast-switching applications100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitch

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AOTF2144L40V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 40V Low RDS(ON) ID (at VGS=10V) 90A Low Gate Charge RDS(ON) (at VGS=10V)

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AOTF2146LTM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 80A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

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AOTF2142L

AOTF2144L40V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 40V Low RDS(ON) ID (at VGS=10V) 90A Low Gate Charge RDS(ON) (at VGS=10V)

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isc N-Channel MOSFET Transistor AOTF2146LFEATURESDrain Current I = 105A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 2.8m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

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isc N-Channel MOSFET Transistor AOTF2144LFEATURESDrain Current I = 120A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 2.3m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

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History: AOT380A60CL | HM2312

 

 
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