All MOSFET. AOY2610E Datasheet

 

AOY2610E MOSFET. Datasheet pdf. Equivalent


   Type Designator: AOY2610E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 59.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id|ⓘ - Maximum Drain Current: 46 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm
   Package: TO251B

 AOY2610E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AOY2610E Datasheet (PDF)

 ..1. Size:411K  aosemi
 aod2610e aoi2610e aoy2610e.pdf

AOY2610E AOY2610E

AOD2610E/AOI2610E/AOY2610ETM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 46A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 ..2. Size:411K  aosemi
 aoy2610e.pdf

AOY2610E AOY2610E

AOD2610E/AOI2610E/AOY2610ETM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 46A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 ..3. Size:273K  inchange semiconductor
 aoy2610e.pdf

AOY2610E AOY2610E

isc N-Channel MOSFET Transistor AOY2610EFEATURESDrain Current I = 46A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 9.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: 2SK1766 | FCP25N60NF102

 

 
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