AOY2610E PDF and Equivalents Search

 

AOY2610E Specs and Replacement

Type Designator: AOY2610E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 59.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 46 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 300 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm

Package: TO251B

AOY2610E substitution

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AOY2610E datasheet

 ..1. Size:411K  aosemi
aod2610e aoi2610e aoy2610e.pdf pdf_icon

AOY2610E

AOD2610E/AOI2610E/AOY2610E TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 46A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

 ..2. Size:411K  aosemi
aoy2610e.pdf pdf_icon

AOY2610E

AOD2610E/AOI2610E/AOY2610E TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 46A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

 ..3. Size:273K  inchange semiconductor
aoy2610e.pdf pdf_icon

AOY2610E

isc N-Channel MOSFET Transistor AOY2610E FEATURES Drain Current I = 46A@ T =25 D C Drain Source Voltage- V =60V(Min) DSS Static Drain-Source On-Resistance R = 9.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos... See More ⇒

Detailed specifications: AOTF292L, AOTF296L, AOW2502, AOW290, AOW292, AOW296, AOWF296, AOWF190A60, IRF830, AP92T12GP, AP95T10GP, AP97T07GP, AP9970GW, AP75N07AGP, AP75N07GP, AP75N07GS, AP85T10GP

Keywords - AOY2610E MOSFET specs

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