AP3N3R3M Datasheet and Replacement
Type Designator: AP3N3R3M
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id| ⓘ - Maximum Drain Current: 21.3 A
Qg ⓘ - Total Gate Charge: 25 nC
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 475 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
Package: SO8
AP3N3R3M substitution
AP3N3R3M Datasheet (PDF)
ap3n3r3m.pdf
AP3N3R3MHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower On-resistance BVDSS 30VDD Simple Drive Requirement D RDS(ON) 3.3mD Fast Switching Characteristic ID3 21.3AGS RoHS Compliant & Halogen-FreeSSSO-8Description DAP3N3R3 series are from Advanced Power innovated design andsilicon process technolog
ap3n3r3mt.pdf
AP3N3R3MTHalogen-Free ProductAdvanced Power N-CHANNEL MOSFET WITH SCHOTTKYElectronics Corp. DIODE 100% Rg & UIS Test BVDSS 30VD Simple Drive Requirement RDS(ON) 3.3m Ultra Low On-resistanceDG RoHS Compliant & Halogen-FreeDDSDDescriptionAP3N3R3 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest possi
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