IRFF024 Spec and Replacement
Type Designator: IRFF024
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 20 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 26(max) nC
tr ⓘ - Rise Time: 70(max) nS
Cossⓘ - Output Capacitance: 340 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
Package: TO39
IRFF024 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFF024 Specs
irff024.pdf
PD - 90657 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRFF024 THRU-HOLE (TO-205AF) 60V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF024 60V 0.15 8.0A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest State of the Art design achi... See More ⇒
irff034.pdf
IRFF034 Dimensions in mm (inches). N-Channel MOSFET 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) in a 9.01 (0.355) Hermetically sealed TO39 4.06 (0.16) 4.57 (0.18) Metal Package. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) dia. N-Channel MOSFET. 5.08 (0.200) typ. VDSS = 60V 2.54 ID = 16A 2 (0.100) 1 3 0.74 (0.029) RDS(ON) = 0.05 ... See More ⇒
Detailed specifications: IRFE430 , IRFE9024 , IRFE9110 , IRFE9120 , IRFE9130 , IRFE9210 , IRFE9220 , IRFE9230 , IRFP250N , IRFF110 , IRFF120 , IRFF130 , IRFF210 , IRFF220 , IRFF230 , IRFF310 , IRFF320 .
History: IRF636A | IXFX66N50Q2 | JBL111P
Keywords - IRFF024 MOSFET specs
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