AP9685GM Datasheet and Replacement
Type Designator: AP9685GM
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5.3 A
tr ⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 135 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
Package: SO8
AP9685GM substitution
AP9685GM Datasheet (PDF)
ap9685gm.pdf

AP9685GM-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 80VDDD Lower Gate Charge RDS(ON) 45mD Fast Switching Characteristic ID 5.3AGS RoHS Compliant & Halogen-Free SSSO-8DescriptionDAP9685 series are from Ad
ap9685gm-hf.pdf

AP9685GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 80VDDD Lower Gate Charge RDS(ON) 45mD Fast Switching Characteristic ID 5.3AGS RoHS Compliant & Halogen-Free SSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fas
Datasheet: AP9467GM , AP9470GM , AP9475GM , AP9479GM , AP9487GM , AP9563GM , AP9620AGM , AP9620GM , AO3401 , AP10A185M , AP10C150M , AP2C018LM , AP2C030LM , AP2P028EM , AP36016M , AP3700M , AP38028EM .
History: FDB0690N1507L | VB7638 | DMN2041LSD | DMN2027USS | TPM4105EC6 | RQK2501YGDQA | IRF9328
Keywords - AP9685GM MOSFET datasheet
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History: FDB0690N1507L | VB7638 | DMN2041LSD | DMN2027USS | TPM4105EC6 | RQK2501YGDQA | IRF9328



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