AP9685GM Datasheet and Replacement
Type Designator: AP9685GM
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 5.3 A
Qgⓘ - Total Gate Charge: 19 nC
trⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 135 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
Package: SO8
- MOSFET Cross-Reference Search
AP9685GM Datasheet (PDF)
ap9685gm.pdf

AP9685GM-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 80VDDD Lower Gate Charge RDS(ON) 45mD Fast Switching Characteristic ID 5.3AGS RoHS Compliant & Halogen-Free SSSO-8DescriptionDAP9685 series are from Ad
ap9685gm-hf.pdf

AP9685GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 80VDDD Lower Gate Charge RDS(ON) 45mD Fast Switching Characteristic ID 5.3AGS RoHS Compliant & Halogen-Free SSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fas
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: AFN4172S
Keywords - AP9685GM MOSFET datasheet
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History: AFN4172S



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