All MOSFET. AP10A185M Datasheet

 

AP10A185M Datasheet and Replacement


   Type Designator: AP10A185M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2.2 A
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.185 Ohm
   Package: SO8
 

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AP10A185M Datasheet (PDF)

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AP10A185M

AP10A185MHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100VD2D2 Fast Switching Characteristic D1 RDS(ON) 185mD1 Low Gate Charge ID 2.2AG2S2 RoHS Compliant & Halogen-FreeG1SO-8S1DescriptionAP10A185 series are from Advanced Power innovated designD2D1and silicon proces

Datasheet: AP9470GM , AP9475GM , AP9479GM , AP9487GM , AP9563GM , AP9620AGM , AP9620GM , AP9685GM , STP80NF70 , AP10C150M , AP2C018LM , AP2C030LM , AP2P028EM , AP36016M , AP3700M , AP38028EM , AP3A010AM .

History: PSMN006-20K | UT2304 | SMIRF12N65T1TL

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