AP10A185M Datasheet. Specs and Replacement

Type Designator: AP10A185M  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.2 A

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 40 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.185 Ohm

Package: SO8

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AP10A185M datasheet

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AP10A185M

AP10A185M Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100V D2 D2 Fast Switching Characteristic D1 RDS(ON) 185m D1 Low Gate Charge ID 2.2A G2 S2 RoHS Compliant & Halogen-Free G1 SO-8 S1 Description AP10A185 series are from Advanced Power innovated design D2 D1 and silicon proces... See More ⇒

Detailed specifications: AP9470GM, AP9475GM, AP9479GM, AP9487GM, AP9563GM, AP9620AGM, AP9620GM, AP9685GM, 10N65, AP10C150M, AP2C018LM, AP2C030LM, AP2P028EM, AP36016M, AP3700M, AP38028EM, AP3A010AM

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