All MOSFET. AP10C150M Datasheet

 

AP10C150M Datasheet and Replacement


   Type Designator: AP10C150M
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2.5 A
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
   Package: SO8
 

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AP10C150M Datasheet (PDF)

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AP10C150M

AP10C150MHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 100VD2D2 Low Gate Charge D1 RDS(ON) 150mD1 Fast Switching Performance ID 2.5AG2S2 RoHS Compliant & Halogen-Free P-CH BVDSS -100VG1S1SO-8RDS(ON) 160mDescription ID -2.5AAP10C150 series are from Advanced

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 ap10c325y.pdf pdf_icon

AP10C150M

AP10C325YHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 100VD2D2 HBM ESD 2kV RDS(ON) 325mD1D1G2 Fast Switching Performance ID4 2AS2 RoHS Compliant & Halogen-Free P-CH BVDSS -100VG1S12928-8RDS(ON) 470mDescription ID4 -1.5AAP10C325 series are from Advanced P

Datasheet: AP9475GM , AP9479GM , AP9487GM , AP9563GM , AP9620AGM , AP9620GM , AP9685GM , AP10A185M , 13N50 , AP2C018LM , AP2C030LM , AP2P028EM , AP36016M , AP3700M , AP38028EM , AP3A010AM , AP3B026M .

History: WML80R350S

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