All MOSFET. AP36016M Datasheet

 

AP36016M Datasheet and Replacement


   Type Designator: AP36016M
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8.7 A
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 290 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: SO8
 

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AP36016M Datasheet (PDF)

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AP36016M

AP36016MHalogen-Free ProductAdvanced Power DUAL P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement BVDSS -30VD2D2D1 Low On-resistance RDS(ON) 18mD1 Fast Switching Characteristic ID -8.7AG2S2 RoHS Compliant & Halogen-FreeG1SO-8 S1DescriptionAP36016 series are from Advanced Power innovated design and siliconD2D1p

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AP36016M

AP3601NHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VD Small Package Outline RDS(ON) 95m Surface Mount Device ID -2.9AS RoHS Compliant & Halogen-FreeSOT-23S GDDescriptionAP3601 series are from Advanced Power innovated design andsilicon process technology to achieve the lowe

Datasheet: AP9620AGM , AP9620GM , AP9685GM , AP10A185M , AP10C150M , AP2C018LM , AP2C030LM , AP2P028EM , 75N75 , AP3700M , AP38028EM , AP3A010AM , AP3B026M , AP3C010M , AP4224LGM , AP4232GM , AP4503AGEM .

History: APT3580BN | RSR030N06

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