AP3B026M Datasheet. Specs and Replacement

Type Designator: AP3B026M  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7.4 A

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 285 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm

Package: SO8

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AP3B026M datasheet

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AP3B026M

AP3B026M Halogen-Free Product Advanced Power DUAL P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Simple Drive Requirement BVDSS -30V D2 D2 D1 Low On-resistance RDS(ON) 26m D1 Fast Switching Characteristic ID -7.2A G2 S2 RoHS Compliant & Halogen-Free G1 SO-8 S1 Description AP3B026 series are from Advanced Power innovated design and D2 D1 silicon p... See More ⇒

Detailed specifications: AP10C150M, AP2C018LM, AP2C030LM, AP2P028EM, AP36016M, AP3700M, AP38028EM, AP3A010AM, STF13NM60N, AP3C010M, AP4224LGM, AP4232GM, AP4503AGEM, AP4506GEM, AP4509GM, AP4511GM, AP4513GM

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.