All MOSFET. AP3B026M Datasheet

 

AP3B026M Datasheet and Replacement


   Type Designator: AP3B026M
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7.4 A
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 285 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
   Package: SO8

 AP3B026M Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP3B026M Datasheet (PDF)

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AP3B026M

AP3B026M Halogen-Free Product Advanced Power DUAL P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Simple Drive Requirement BVDSS -30V D2 D2 D1 Low On-resistance RDS(ON) 26m D1 Fast Switching Characteristic ID -7.2A G2 S2 RoHS Compliant & Halogen-Free G1 SO-8 S1 Description AP3B026 series are from Advanced Power innovated design and D2 D1 silicon p... See More ⇒

Datasheet: AP10C150M , AP2C018LM , AP2C030LM , AP2P028EM , AP36016M , AP3700M , AP38028EM , AP3A010AM , STF13NM60N , AP3C010M , AP4224LGM , AP4232GM , AP4503AGEM , AP4506GEM , AP4509GM , AP4511GM , AP4513GM .

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