All MOSFET. AP3B026M Datasheet

 

AP3B026M MOSFET. Datasheet pdf. Equivalent


   Type Designator: AP3B026M
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 7.4 A
   Qgⓘ - Total Gate Charge: 24 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 285 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
   Package: SO8

 AP3B026M Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP3B026M Datasheet (PDF)

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 ap3b026m.pdf

AP3B026M AP3B026M

AP3B026MHalogen-Free ProductAdvanced Power DUAL P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement BVDSS -30VD2D2D1 Low On-resistance RDS(ON) 26mD1 Fast Switching Characteristic ID -7.2AG2S2 RoHS Compliant & Halogen-FreeG1SO-8 S1DescriptionAP3B026 series are from Advanced Power innovated design andD2D1silicon p

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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