All MOSFET. AP3B026M Datasheet

 

AP3B026M Datasheet and Replacement


   Type Designator: AP3B026M
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7.4 A
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 285 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
   Package: SO8
 

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AP3B026M Datasheet (PDF)

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AP3B026M

AP3B026MHalogen-Free ProductAdvanced Power DUAL P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement BVDSS -30VD2D2D1 Low On-resistance RDS(ON) 26mD1 Fast Switching Characteristic ID -7.2AG2S2 RoHS Compliant & Halogen-FreeG1SO-8 S1DescriptionAP3B026 series are from Advanced Power innovated design andD2D1silicon p

Datasheet: AP10C150M , AP2C018LM , AP2C030LM , AP2P028EM , AP36016M , AP3700M , AP38028EM , AP3A010AM , IRF2807 , AP3C010M , AP4224LGM , AP4232GM , AP4503AGEM , AP4506GEM , AP4509GM , AP4511GM , AP4513GM .

History: AOE6932 | AP4543GEH-HF | TSM75N75CZ | NCE60N1K0I | PDN2309S

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