All MOSFET. AP8N010LM Datasheet

 

AP8N010LM Datasheet and Replacement


   Type Designator: AP8N010LM
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 11.8 A
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 1020 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: SO8
 

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AP8N010LM Datasheet (PDF)

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AP8N010LM

AP8N010LMHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower On-resistance BVDSS 80VDD Simple Drive Requirement D RDS(ON) 10mD Fast Switching Characteristic ID3 11.8AGS RoHS Compliant & Halogen-FreeSSSO-8Description DAP8N010L series are from Advanced Power innovated design andsilicon process technolo

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AP8N010LM

AP8N06SI 60V N-Channel Enhancement Mode MOSFET Description The AP8N06SI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =8.5A DS DR

Datasheet: AP4532GM , AP4533GEM , AP4578GM , AP4963GEM , AP5322GM , AP6A100M , AP6C036M , AP6C072M , K2611 , AP9926GM , AP9936GM , AP9938GEM , AP9960GM , AP9962AGM , AP9971AGM , AP9971GM , AP9975GM .

History: 2SK3004 | SI2301CDS-T1 | SE4610 | BRU24N50 | IRFL110TR | SI2301ADS-T1 | SWB056R68E7T

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