AP8N010LM MOSFET Datasheet: N-Ch, 80V, 11.8A. Full specification with pinout and replacement list

AP8N010LM Specs and Replacement

Type Designator: AP8N010LM

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 11.8 A

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 1020 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm

Package: SO8

AP8N010LM substitution

- MOSFET ⓘ Cross-Reference Search

AP8N010LM datasheet

..1. Size:222K ape
ap8n010lm.pdf pdf_icon

AP8N010LM Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower On-resistance BVDSS 80V D D Simple Drive Requirement D RDS(ON) 10m D Fast Switching Characteristic ID3 11.8A G S RoHS Compliant & Halogen-Free S S SO-8 Description D AP8N010L series are from Advanced Power innovated design and silicon process technolo... See More ⇒

9.1. Size:1595K cn apm
ap8n06si.pdf pdf_icon

AP8N06SI 60V N-Channel Enhancement Mode MOSFET Description The AP8N06SI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =8.5A DS D R ... See More ⇒

Detailed specifications: AP4532GM, AP4533GEM, AP4578GM, AP4963GEM, AP5322GM, AP6A100M, AP6C036M, AP6C072M, K2611, AP9926GM, AP9936GM, AP9938GEM, AP9960GM, AP9962AGM, AP9971AGM, AP9971GM, AP9975GM