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APA2N70K Specs and Replacement

Type Designator: APA2N70K

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 0.35 A

Electrical Characteristics

tr ⓘ - Rise Time: 3.6 nS

Cossⓘ - Output Capacitance: 25 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 10 Ohm

Package: SOT223

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APA2N70K datasheet

 ..1. Size:68K  ape
 apa2n70k.pdf pdf_icon

APA2N70K

APA2N70K RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600V D Fast Switching Characteristic RDS(ON) 10 S Simple Drive Requirement ID 0.35A D G SOT-223 D Description Advanced Power MOSFETs from APEC provide the designer with the best G combination of fast switching,low on-resistance and cost... See More ⇒

Detailed specifications: AP09T10GK, AP10TN135K, AP30T10GK, AP60WN4K9K, AP6N090K, AP6N090LK, AP6P250K, AP04N20GK, IRFP460, AP18P10GK, AP70SL1K4BK2, AP10P500N, AP10TN135N, AP2302AGN, AP2304AGN, AP2304GN, AP2306AGEN

Keywords - APA2N70K MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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