All MOSFET. APA2N70K Datasheet

 

APA2N70K Datasheet and Replacement


   Type Designator: APA2N70K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 0.35 A
   tr ⓘ - Rise Time: 3.6 nS
   Cossⓘ - Output Capacitance: 25 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 10 Ohm
   Package: SOT223
 

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APA2N70K Datasheet (PDF)

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APA2N70K

APA2N70KRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600VD Fast Switching Characteristic RDS(ON) 10S Simple Drive Requirement ID 0.35ADGSOT-223DDescriptionAdvanced Power MOSFETs from APEC provide the designer with the bestGcombination of fast switching,low on-resistance and cost

Datasheet: AP09T10GK , AP10TN135K , AP30T10GK , AP60WN4K9K , AP6N090K , AP6N090LK , AP6P250K , AP04N20GK , IRF640 , AP18P10GK , AP70SL1K4BK2 , AP10P500N , AP10TN135N , AP2302AGN , AP2304AGN , AP2304GN , AP2306AGEN .

History: HGD040N06S | HMS17N65F | UT3N06G-TM3-T | SSF4604 | D5N65-XAD | AP25N10GH | KIA4N60H-252

Keywords - APA2N70K MOSFET datasheet

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