All MOSFET. APA2N70K Datasheet

 

APA2N70K Datasheet and Replacement


   Type Designator: APA2N70K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 0.35 A
   trⓘ - Rise Time: 3.6 nS
   Cossⓘ - Output Capacitance: 25 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 10 Ohm
   Package: SOT223
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APA2N70K Datasheet (PDF)

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APA2N70K

APA2N70KRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600VD Fast Switching Characteristic RDS(ON) 10S Simple Drive Requirement ID 0.35ADGSOT-223DDescriptionAdvanced Power MOSFETs from APEC provide the designer with the bestGcombination of fast switching,low on-resistance and cost

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: RJK0331DPB-00

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