All MOSFET. AP5600N Datasheet

 

AP5600N Datasheet and Replacement


   Type Designator: AP5600N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 2.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 37 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
   Package: SOT23
 

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AP5600N Datasheet (PDF)

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AP5600N

AP5600NHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 50VD Fast Switching Characteristic RDS(ON) 160m Low Gate Charge ID 2.1AS RoHS Compliant & Halogen-FreeSOT-23 GDescription DAP5600 series are from Advanced Power innovated design andsilicon process technology to achieve the lo

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AP5600N

AP5602PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement D BVDSS 55V Low On-resistance RDS(ON) 8m Fast Switching Characteristic ID 100AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series are from Advanced Power innovated designAP5602 series are from Advanced Power innovated des

Datasheet: AP2323AGN , AP2323GN , AP2326GN , AP2328GN , AP2330GN , AP2338GN , AP2344GN , AP2346GN , AON7408 , AP60PN72REN , AP60PN72RLEN , AP15TN1R5N , AP2309GEN , AP2321GN , AP2325GEN , AP2N025LN , AP2N030EN .

History: PMN27UN | IPP65R660CFD | SWN6N70DB | MIC94052BC6TR | GSM9435WS | TSM7900DCQ | TSF9N90M

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