AP5600N MOSFET Datasheet: N-Ch, 50V, 2.1A. Full specification with pinout and replacement list

AP5600N Specs and Replacement

Type Designator: AP5600N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.38 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 2.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 37 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm

Package: SOT23

AP5600N substitution

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AP5600N datasheet

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AP5600N Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 50V D Fast Switching Characteristic RDS(ON) 160m Low Gate Charge ID 2.1A S RoHS Compliant & Halogen-Free SOT-23 G Description D AP5600 series are from Advanced Power innovated design and silicon process technology to achieve the lo... See More ⇒

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AP5602P Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement D BVDSS 55V Low On-resistance RDS(ON) 8m Fast Switching Characteristic ID 100A G G RoHS Compliant & Halogen-Free S S Description AP4604 series are from Advanced Power innovated design AP5602 series are from Advanced Power innovated des... See More ⇒

Detailed specifications: AP2323AGN, AP2323GN, AP2326GN, AP2328GN, AP2330GN, AP2338GN, AP2344GN, AP2346GN, IRFP250N, AP60PN72REN, AP60PN72RLEN, AP15TN1R5N, AP2309GEN, AP2321GN, AP2325GEN, AP2N025LN, AP2N030EN