AP6P250N Specs and Replacement
Type Designator: AP6P250N
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 37 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
Package: SOT23S
AP6P250N substitution
- MOSFET ⓘ Cross-Reference Search
AP6P250N datasheet
ap6p250n.pdf
AP6P250N Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -60V D Small Package Outline RDS(ON) 250m Surface Mount Device ID -1.6A S RoHS Compliant & Halogen-Free SOT-23S G D Description AP6P250N series are from Advanced Power innovated design and silicon process technology to achieve the ... See More ⇒
ap6p250k.pdf
AP6P250K Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -60V D Lower Gate Charge RDS(ON) 250m S Fast Switching Characteristic ID -2.4A D RoHS Compliant & Halogen-Free SOT-223 G D Description AP6P250 series are from Advanced Power innovated design and silicon process technology to achi... See More ⇒
Detailed specifications: AP2P053N , AP3601N , AP3N028EN , AP3N035N , AP3N045EN , AP3P080N , AP3P090N , AP6N090N , 12N60 , AP2301EN , AP2314GN , AP2318GEN , AP2320GN , AP6N2K0EN , AP2308GEN , AP2318BEN , AP15TP1R0Y .
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
