AP6P250N MOSFET. Datasheet pdf. Equivalent
Type Designator: AP6P250N
Marking Code: A08SS
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 1.25 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
Maximum Drain Current |Id|: 1.6 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 5 nS
Drain-Source Capacitance (Cd): 37 pF
Maximum Drain-Source On-State Resistance (Rds): 0.25 Ohm
Package: SOT23S
AP6P250N Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP6P250N Datasheet (PDF)
1.1. ap6p250n.pdf 
Size:188K _a-power
AP6P250N Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement BVDSS -60V D ▼ Small Package Outline RDS(ON) 250mΩ ▼ Surface Mount Device ID -1.6A S ▼ RoHS Compliant & Halogen-Free SOT-23S G D Description AP6P250N series are from Advanced Power innovated design and silicon process technology to achieve the
3.1. ap6p250k.pdf Size:177K _a-power
AP6P250K Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement BVDSS -60V D ▼ Lower Gate Charge RDS(ON) 250mΩ S ▼ Fast Switching Characteristic ID -2.4A D ▼ RoHS Compliant & Halogen-Free SOT-223 G D Description AP6P250 series are from Advanced Power innovated design and silicon process technology to achi
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