All MOSFET. AP6P250N Datasheet

 

AP6P250N Datasheet and Replacement


   Type Designator: AP6P250N
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 37 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
   Package: SOT23S
 

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AP6P250N Datasheet (PDF)

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AP6P250N

AP6P250NHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -60VD Small Package Outline RDS(ON) 250m Surface Mount Device ID -1.6AS RoHS Compliant & Halogen-FreeSOT-23S GDDescriptionAP6P250N series are from Advanced Power innovated designand silicon process technology to achieve the

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AP6P250N

AP6P250KHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -60VD Lower Gate Charge RDS(ON) 250mS Fast Switching Characteristic ID -2.4AD RoHS Compliant & Halogen-FreeSOT-223GDDescriptionAP6P250 series are from Advanced Power innovated design andsilicon process technology to achi

Datasheet: AP2P053N , AP3601N , AP3N028EN , AP3N035N , AP3N045EN , AP3P080N , AP3P090N , AP6N090N , IRF1010E , AP2301EN , AP2314GN , AP2318GEN , AP2320GN , AP6N2K0EN , AP2308GEN , AP2318BEN , AP15TP1R0Y .

History: TMD8N60AZ | SPD02N60C3 | WTK6680

Keywords - AP6P250N MOSFET datasheet

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