AP4C205Y Datasheet and Replacement
Type Designator: AP4C205Y
Marking Code: Z04SS
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pdⓘ - Maximum Power Dissipation: 1.136 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 2.9 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 2.5 nC
trⓘ - Rise Time: 19 nS
Cossⓘ - Output Capacitance: 37 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.078 Ohm
Package: SOT26
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AP4C205Y Datasheet (PDF)
ap4c205y.pdf

AP4C205YHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETD2 Low Gate Charge N-CH BVDSS 40VS1 Fast Switching Performance RDS(ON) 78mD1 Surface Mount Package ID 2.9AG2S2 RoHS Compliant & Halogen-Free P-CH BVDSS -40VSOT-26 G1RDS(ON) 205mDescription ID -1.9AAP4C205 series are from Advanced Power innovate
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: AP4533GEH-HF | AP4835GM | AP4N2R6J
Keywords - AP4C205Y MOSFET datasheet
AP4C205Y cross reference
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History: AP4533GEH-HF | AP4835GM | AP4N2R6J



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