All MOSFET. AP4C205Y Datasheet

 

AP4C205Y MOSFET. Datasheet pdf. Equivalent


   Type Designator: AP4C205Y
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 1.136 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 2.9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 37 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.078 Ohm
   Package: SOT26

 AP4C205Y Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP4C205Y Datasheet (PDF)

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 ap4c205y.pdf

AP4C205Y AP4C205Y

AP4C205YHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETD2 Low Gate Charge N-CH BVDSS 40VS1 Fast Switching Performance RDS(ON) 78mD1 Surface Mount Package ID 2.9AG2S2 RoHS Compliant & Halogen-Free P-CH BVDSS -40VSOT-26 G1RDS(ON) 205mDescription ID -1.9AAP4C205 series are from Advanced Power innovate

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