All MOSFET. AP6800EY Datasheet

 

AP6800EY MOSFET. Datasheet pdf. Equivalent


   Type Designator: AP6800EY
   Marking Code: Z64SS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 0.26 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 0.9 nC
   trⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 10 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: SOT26

 AP6800EY Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP6800EY Datasheet (PDF)

 ..1. Size:165K  ape
 ap6800ey.pdf

AP6800EY AP6800EY

AP6800EYHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETS2 Simple Drive Requirement BVDSS 60VG2D1 Smaller Outline Package RDS(ON) 2D2 Surface mount package ID3 260mAG1SOT-26S1 RoHS Compliant & Halogen-FreeD1 D2DescriptionG1 G2AP6800 series are from Advanced Power innovated design andsilicon proce

 8.1. Size:107K  ape
 ap6800geo.pdf

AP6800EY AP6800EY

AP6800GEOPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETG2Low on-resistance BVDSS 20V S2S2D2Capable of 2.5V gate drive RDS(ON) 20m G1S1Optimal DC/DC battery application S1 ID 6 TSSOP-8D1 RoHS compliantDescriptionD1 D2The Advanced Power M

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History: AP60WN650I

 

 
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