All MOSFET. AP6800EY Datasheet

 

AP6800EY Datasheet and Replacement


   Type Designator: AP6800EY
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.26 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 10 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: SOT26
 

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AP6800EY Datasheet (PDF)

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AP6800EY

AP6800EYHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETS2 Simple Drive Requirement BVDSS 60VG2D1 Smaller Outline Package RDS(ON) 2D2 Surface mount package ID3 260mAG1SOT-26S1 RoHS Compliant & Halogen-FreeD1 D2DescriptionG1 G2AP6800 series are from Advanced Power innovated design andsilicon proce

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AP6800EY

AP6800GEOPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETG2Low on-resistance BVDSS 20V S2S2D2Capable of 2.5V gate drive RDS(ON) 20m G1S1Optimal DC/DC battery application S1 ID 6 TSSOP-8D1 RoHS compliantDescriptionD1 D2The Advanced Power M

Datasheet: AP6N090Y , AP2906EY , AP2626GY , AP2530GY , AP2530AGY , AP4C205Y , AP2535GEY , AP2622GY , 75N75 , AP1332GEU , AP2N7002KU , AP1430GEU6 , AP2N1K2EN1 , AP5N2K2EN1 , AP2N050G , AP6N090G , AP9451GG .

History: 2SK3885-01 | CJQ4800 | 2SK1377 | PW5S6EA | DH150N12I | 2SJ479S | GSM6202S

Keywords - AP6800EY MOSFET datasheet

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