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IRFF430 Spec and Replacement


   Type Designator: IRFF430
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30(max) nS
   Cossⓘ - Output Capacitance: 135 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: TO39

 IRFF430 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFF430 Specs

 ..1. Size:129K  international rectifier
 2n6802 irff430.pdf pdf_icon

IRFF430

PD -90433C IRFF430 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6802 HEXFET TRANSISTORS JANTXV2N6802 THRU-HOLE (TO-205AF) REF MIL-PRF-19500/557 500V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF430 500V 1.5 2.5A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processing ... See More ⇒

 9.1. Size:128K  international rectifier
 2n6794 irff420.pdf pdf_icon

IRFF430

PD - 90429C IRFF420 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6794 HEXFET TRANSISTORS JANTXV2N6794 THRU-HOLE (TO-205AF) REF MIL-PRF-19500/555 500V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF420 500V 3.0 1.5A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processing... See More ⇒

 9.2. Size:99K  international rectifier
 irff1xx irff2xx irff3xx irff4xx 2n678x 2n679x 2n680x.pdf pdf_icon

IRFF430

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Detailed specifications: IRFF130 , IRFF210 , IRFF220 , IRFF230 , IRFF310 , IRFF320 , IRFF330 , IRFF420 , K3569 , IRFF9024 , IRFF9110 , IRFF9120 , IRFF9130 , IRFF9210 , IRFF9220 , IRFF9230 , IRFI1010N .

History: IPP110N20NA | MRF177M

Keywords - IRFF430 MOSFET specs

 IRFF430 cross reference
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