IRFF430 Datasheet: MOSFET, N-Ch, 500V, 2.5A. Full specification with pinout and replacement list

IRFF430 Datasheet. Specs and Replacement

Type Designator: IRFF430 📄📄

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 max nS

Cossⓘ - Output Capacitance: 135 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: TO39

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IRFF430 substitution

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IRFF430 datasheet

..1. Size:129K international rectifier
2n6802 irff430.pdf pdf_icon

PD -90433C IRFF430 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6802 HEXFET TRANSISTORS JANTXV2N6802 THRU-HOLE (TO-205AF) REF MIL-PRF-19500/557 500V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF430 500V 1.5 2.5A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processing ... See More ⇒

9.1. Size:128K international rectifier
2n6794 irff420.pdf pdf_icon

PD - 90429C IRFF420 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6794 HEXFET TRANSISTORS JANTXV2N6794 THRU-HOLE (TO-205AF) REF MIL-PRF-19500/555 500V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF420 500V 3.0 1.5A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processing... See More ⇒

9.2. Size:99K international rectifier
irff1xx irff2xx irff3xx irff4xx 2n678x 2n679x 2n680x.pdf pdf_icon