AP1430GEU6 MOSFET Datasheet: N-Ch, 60V, 0.23A. Full specification with pinout and replacement list

AP1430GEU6 Specs and Replacement

Type Designator: AP1430GEU6

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.277 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.23 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 9 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm

Package: SOT363

AP1430GEU6 substitution

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AP1430GEU6 datasheet

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AP1430GEU6-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET S2 Simple Gate Drive BVDSS 60V G2 D1 Small Package Outline RDS(ON) 2.5 D2 G1 Embedded Protection Diode ID 230mA S1 SOT-363 RoHS Compliant & Halogen Free D1 D2 Description G1 G2 Advanced Power MOSFETs from APEC provide the designer with the best combina... See More ⇒

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