AP1430GEU6 Datasheet and Replacement
Type Designator: AP1430GEU6
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.277 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.23 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 9 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
Package: SOT363
AP1430GEU6 substitution
AP1430GEU6 Datasheet (PDF)
ap1430geu6.pdf

AP1430GEU6-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETS2 Simple Gate Drive BVDSS 60VG2D1 Small Package Outline RDS(ON) 2.5D2G1 Embedded Protection Diode ID 230mAS1SOT-363 RoHS Compliant & Halogen FreeD1 D2DescriptionG1 G2Advanced Power MOSFETs from APEC provide the designer withthe best combina
ap1430geu6-hf.pdf

AP1430GEU6-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETS2 Simple Gate Drive BVDSS 60VG2D1 Small Package Outline RDS(ON) 2.5D2G1 Embedded Protection Diode ID 230mAS1SOT-363 RoHS Compliant & Halogen FreeD1 D2DescriptionG1 G2Advanced Power MOSFETs from APEC provide the designer withthe best combina
Datasheet: AP2530GY , AP2530AGY , AP4C205Y , AP2535GEY , AP2622GY , AP6800EY , AP1332GEU , AP2N7002KU , IRFB31N20D , AP2N1K2EN1 , AP5N2K2EN1 , AP2N050G , AP6N090G , AP9451GG , AP9452GG , AP9T16AGH , AP99T03GS .
History: 12N80G-T3P-T | AONR32318 | JMSH0804NK
Keywords - AP1430GEU6 MOSFET datasheet
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History: 12N80G-T3P-T | AONR32318 | JMSH0804NK



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