AP2N1K2EN1 PDF and Equivalents Search

 

AP2N1K2EN1 Specs and Replacement

Type Designator: AP2N1K2EN1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.15 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 0.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 14 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: SOT723

AP2N1K2EN1 substitution

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AP2N1K2EN1 datasheet

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AP2N1K2EN1

AP2N1K2EN1 Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 1.2V Low Gate Drive BVDSS 20V D Lower Gate Charge RDS(ON) 1.2 G Fast Switching Performance ID 200mA RoHS Compliant & Halogen-Free HBM ESD 2KV S Description 2 1 Gate 2 Drain AP2N1K2E series are from Advanced Power innovated design 3 Source an... See More ⇒

Detailed specifications: AP2530AGY, AP4C205Y, AP2535GEY, AP2622GY, AP6800EY, AP1332GEU, AP2N7002KU, AP1430GEU6, STF13NM60N, AP5N2K2EN1, AP2N050G, AP6N090G, AP9451GG, AP9452GG, AP9T16AGH, AP99T03GS, AP99T03GP

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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