All MOSFET. AP2N1K2EN1 Datasheet

 

AP2N1K2EN1 Datasheet and Replacement


   Type Designator: AP2N1K2EN1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 0.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 14 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: SOT723
 

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AP2N1K2EN1 Datasheet (PDF)

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AP2N1K2EN1

AP2N1K2EN1Halogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 1.2V Low Gate Drive BVDSS 20VD Lower Gate Charge RDS(ON) 1.2G Fast Switching Performance ID 200mA RoHS Compliant & Halogen-Free HBM ESD 2KVSDescription2 1 : Gate2 : DrainAP2N1K2E series are from Advanced Power innovated design3 : Sourcean

Datasheet: AP2530AGY , AP4C205Y , AP2535GEY , AP2622GY , AP6800EY , AP1332GEU , AP2N7002KU , AP1430GEU6 , IRF2807 , AP5N2K2EN1 , AP2N050G , AP6N090G , AP9451GG , AP9452GG , AP9T16AGH , AP99T03GS , AP99T03GP .

History: STF5N60M2 | AUIRFIZ44N | SM140R50CT1TL | BLP04N10-P | DHB16N06 | STD95N04 | AP60SL650AFI

Keywords - AP2N1K2EN1 MOSFET datasheet

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