AP5N2K2EN1 Datasheet and Replacement

   Type Designator: AP5N2K2EN1
   Marking Code: BSS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.9 V
   |Id|ⓘ - Maximum Drain Current: 0.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 1.2 nC
   trⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 10 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm
   Package: SOT723
      - MOSFET Cross-Reference Search