AP9938GEO PDF and Equivalents Search

 

AP9938GEO Specs and Replacement

Type Designator: AP9938GEO

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 130 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm

Package: TSSOP8

AP9938GEO substitution

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AP9938GEO datasheet

 ..1. Size:144K  ape
ap9938geo.pdf pdf_icon

AP9938GEO

AP9938GEO-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET G2 S2 Low on-resistance S2 BVDSS 20V D2 Capable of 1.8V Gate Drive G1 RDS(ON) 18m S1 S1 TSSOP-8 D1 Optimal DC/DC Battery Application ID3 6A Halogen Free & RoHS Compliant Product Description D1 D2 Advanced Power MOSFETs from APEC provide the designer... See More ⇒

 0.1. Size:73K  ape
ap9938geo-hf.pdf pdf_icon

AP9938GEO

AP9938GEO-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET G2 S2 Low on-resistance S2 BVDSS 20V D2 Capable of 1.8V Gate Drive G1 RDS(ON) 18m S1 S1 TSSOP-8 D1 Optimal DC/DC Battery Application ID 6A Halogen Free & RoHS Compliant Product Description D1 D2 Advanced Power MOSFETs from APEC provide the designer ... See More ⇒

 6.1. Size:73K  ape
ap9938gem-hf.pdf pdf_icon

AP9938GEO

AP9938GEM-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET D2 Simple Drive Requirement BVDSS 20V D2 D1 Low On-resistance RDS(ON) 18m D1 Fast Switching Performance ID 8.5A G2 S2 RoHS Compliant & Halogen-Free G1 S1 SO-8 Description AP9938 series are from Advanced Power innovated design and D1 D2 silicon pr... See More ⇒

 6.2. Size:177K  ape
ap9938gey.pdf pdf_icon

AP9938GEO

AP9938GEY-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Capable of 1.8V Gate Drive BVDSS 20V D1/D2 Lower on-resistance RDS(ON) 16m G2 Surface Mount Package ID 7.5A S2 RoHS Compliant & Halogen-Free G1 S1 2928-8 Description D1 D2 Advanced Power MOSFETs utilized advanced processing G1 G2 techniques to achiev... See More ⇒

Detailed specifications: AP99T03GP, AP9992GR, AP9990GMT-L, AP9990GMT, AP9979GH, AP9950AGP, AP9950AGH, AP9938GEY, IRFB7545, AP9938AGEY, AP9926GEO, AP9923GEO, AP9922GEO, AP97T07AGP, AP95T10AGP, AP95T07BGP, AP9579GJ

Keywords - AP9938GEO MOSFET specs

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